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Details, datasheet, quote on part number:2N6107
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| Part: | 2N6107 |
| Category: | Discrete => Transistors => Bipolar |
| Description: | Package Type : TO-220 Plastic-encapsulate Bipolar Transistor, PC : 40W, Vceo : 70V, ic : 7.0A |
| Company: | Micro Commercial Components |
| Datasheet: | Download 2N6107 datasheet File size : 134 kB |
| Request For quote: | Find where to buy 2N6107
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Datasheet text preview:
MCC
Features
·
omponents 20736 Marilla Street Chatsworth !"# $
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2N6107
This device is designed for use in general purpose amplifier and switching applications.
PNP Silicon Complementary Power Transistor
Maximum Ratings*
Symbol V CEO V CBO V EBO IC IB TJ TS T G Symbol PD RJ C Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Parameter Collector-Emitter Breakdown Voltage (1) (IC=100mAdc, IE =0) Collector Cutoff Current (VCB=60Vdc, IE =0) Collector Cutoff Current (VCE=80Vdc, VEB(off)=1.5Vdc) (VCE=70Vdc, V EB(off)=1.5Vdc , TC=125 OC) Emitter Cutoff Current (VE B =5.0Vdc, IC=0)
(1)
Rating 70 80 5.0 7.0 10 3.0 -55 to +150 -55 to +150 Max 40 0.32 3.125 Min Max
Unit V V V A A C O C
O
TO-220
B C K
PIN
L D
M
A E F G
Thermal Characteristics
Unit W W/OC O C/W Units
Electrical Characteristics @ 25OC Unless Otherwise Specified
OFF CHARACTERISTICS
VCEO(sus) ICEO ICEX 70 ----------1.0 100 2.0 1.0 Vdc mAdc uA mA mAdc
A B C D E F G H I J K L M N
I
1 2 3
J HH
PIN 1. PIN 2. PIN 3.
N
BASE COLLECTOR EMITTER
IE B O
MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92
ON CHARACTERISTICS
hFE
DC Current Gain (V CE=4.0Vdc, IC=2.0Adc) (V CE=4.0Vdc, IC=7.0Adc) VCE(sat) Collector-Emitter Saturation Voltage (IC=7.0Adc, IB =3.0Adc) VBE(on) Base-Emitter On Voltage (IC=7.0Adc, VCE=4.0Vdc) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
30 2.3 -----
150 --3.5 3.0
--Vdc Vdc
INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115
www.mccsemi.com
Revision: 2 2003/04/30
2N6107
MCC
Parameter Min Max Units
Symbol
DYNAMIC CHARACTERISTICS
Current Gain- Bandwidth Product (2) (IC=500mAdc, V CE=4.0Vdc, f=1.0MHz ) Cob Output Capacitance (V CE=10Vdc, IE =0, f=1.0MHz) hfe Small-Signal Current Gain (IC=0.5Adc, VCE=4.0Vdc, f=50KHz ) (2) f T=|hfe| X f test fT 10 --20 --250 --MHz pF ---
40 PD, POWER DISSIPATION (WATTS)
2.0 1.0 TJ = 25°C VCC = 30 V IC/IB = 10
30 t, TIME ( µs)
0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.07 0.1
20
tr td @ VBE(off) 5.0 V
10
0
0
20
40 60 80 100 120 TC, CASE TEMPERATURE (°C)
140
160
0.2 0.3 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMP)
3.0
5.0 7.0
Figure 1. Power Derating
Figure 2. TurnOn Time
5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.07 0.1 ts TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2
300 200 C, CAPACITANCE (pF) Cib 100 70 50 30 0.5 Cob TJ = 25°C
t, TIME ( µs)
tr
0.2
1.0 0.3 0.5 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
5.0 7.0
1.0
10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS)
30
50
Figure 3. TurnOff Time
Figure 4. Capacitance
www.mccsemi.com
Revision: 2 2003/04/30
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