Details, datasheet, quote on part number: 2SC1815
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| Specifications, Features, Applications |
Features
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Marking Code: C1815
Symbol Parameter Collector-Emitter Breakdown Voltage* IB =0) Collector-Base Breakdown Voltage IE =0) Emitter-Base Voltage (IE =310mAdc) Collector Cutoff Current IE =0Adc) Collector Cutoff Current IE =0Adc) Emitter Cutoff Current (VEB IC=0Adc) DC Current Gain* V CE=6.0Vdc) Collector-Emitter Saturation Voltage IB =10mAdc) Base-Emitter Saturation Voltage IB =10mAdc) Base-Emitter Voltage (IE=310mAdc) Transistor Frequency Y 120-240 Min Max Units Vdc
V(BR)CEO V(BR)CBO VBEF ICBO ICEO IEBO
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| Some Part number from the same manufacture Micro Commercial Components |
| 2SC1959 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 500mW, Vceo : 30V, ic : 500mA |
| 2SC2001 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 600mW, Vceo : 25V, ic : 700mA |
| 2SC2216 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 300mW, Vceo : 45V, ic : 50mA |
| 2SC2383 Package Type : TO-92MOD Plastic-encapsulate Bipolar Transistor, PC : 900mW, Vceo : 160V, ic : 1000mA |
| 2SC3279 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 750mW, Vceo : 10V, ic : 2000mA |
| 2W005 Package Type : Wol, if : 2.0A, VRM : 50V |
| 3KP10 Package Type : R-6, PPK : 3000W, VC : 18.8V |
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