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Part: BAT54C

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Schottky Diodes
             -> Small Signal

Description: Package Type : SOT-23, if : 0.3A, VRM : 30V

Company: Micro Commercial Components

Datasheet: Download BAT54C datasheet     File size : 40 kB

Request For quote: Find where to buy BAT54C



Datasheet text preview:
MCC
Features
· · · Low Forward Voltage Surface Mount device Very small conduction losses MCC Catalog Number BAT54 BAT54A BAT54C BAT54S Device Marking L4P L42 L43 L44


omponents 20736 Marilla Street Chatsworth !"# $
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BAT54 THRU BAT54S
250mWatt, 30Volt
Schottky Barrier Diode

Type Single Dual Dual Dual

Pin Configuration
(See Page 3)

Figure 1 Figure 2 Figure 3 Figure 4

A D

SOT-23

C

B

Maximum Ratings
Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t<1s Total Power Dissipation @ TA = 25°C Storage Temperature Range Junction Temperature Soldering temperature during 10s VR IF IFSM PD Tstg Tj Tj 30V 0.3A 1.0A 250mW -55°C to 150°C 150°C 260°C
G

F

E

H

J

K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37

Electrical Characteristics @ 25 °C Unless Otherwise Specified
Ratings Forward Voltage at IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA Reverse Current Reverse Breakdown Voltage Capacitance Reverse Recovery Time Thermal Resistance, Junction to Ambient Symbol VF Max. 240mV 320mV 400mV 500mV 900mV 2.0 uA >30V 10pF 5nS 430 °C/W Notes

DIM A B C D E F G H J K

MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020

MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51

NOTE

Suggested Solder Pad Layout VR = 25V
.035 .900 .031 .800

IR V(BR ) CJ trr RJA

Measured at 1.0MHz, VR=1.0V I F = I R =10mA; I(REC) = 1mA

.079 2.000

inches mm

.037 .950

.037 .950

www.mccsemi.com
Revision: 3 2003/02/21

BAT54 thru BAT54S

MCC
Fig.2 : Average forward current versus ambient temperature ( = 1).
0.35
IF(av)(A)

Fig.1 : Average forward power dissipation versus average forward current.
PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20
=tp/T
tp T

= 0.1 = 0.05

= 0.2

= 0.5

0.30 0.25
=1

0.20 0.15 0.10 0.05
=tp/T
T

tp

Tamb(°C)

0.25

0.30

0.00

0

25

50

75

100

125

150

Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values).

Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm).
Zth(j-a)/Rth(j-a)

IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3

1.00
= 0.5

= 0.2

Ta=25°C
= 0.1

Ta=50°C

0.10
T
Single pulse

Ta=100°C

t

=0.5

t(s) 1E-2 1E-1 1E+0

tp(s)

=tp/T

tp

0.01 1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

www.mccsemi.com
Revision: 3 2003/02/21

BAT54 thru BAT54S

MCC

Fig.5 : Reverse leakage current versus reverse voltage applied (typical values).
IR(µA) 1E+2
Tj=100°C

Fig.6 : Reverse leakage current versus junction t e m pe r a t ur e.
IR(µA) 1E+4
VR=30V

1E+3 1E+2 1E+1

1E+1 1E+0 1E-1 1E-2
Tj=50°C

1E+0
Tj=25°C

1E-1

VR(V) 0 5 10 15 20 25 30

Tj(°C) 1E-2 0 25 50 75 100 125 150

Fig.7 : Junction capacitance versus reverse vo lt a g e applied (typical values).
C(pF) 10
F=1MHz Tj=25°C

Fig.8 : Forward voltage drop versus forward cu rre nt (typical values).
IFM(A) 5E-1 1E-1
Tj=100°C

5
1E-2
Tj=50°C

2 VR(V) 1 1 2 5 10 20 30

Tj=25°C

1E-3 VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Pin Configuration - Top View

3

1
Figure 1

2
Figure 2 Figure 3 Figure 4

BAT54

BAT54A

BAT54C

BAT54S

www.mccsemi.com
Revision: 3 2003/02/21




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