Details, datasheet, quote on part number: FR301
PartFR301
CategoryDiscrete => Diodes & Rectifiers => Fast Recovery Rectifiers
DescriptionPackage Type : DO-201AD, if : 3.0A, VRM : 50V
CompanyMicro Commercial Components
DatasheetDownload FR301 datasheet
Cross ref.Similar parts: EGP20K, MR852, MR910, PR3001, PS300R, RP300A, HER301, RP300
Quote
Find where to buy
 
  

 

Features, Applications
Features

Low Cost Low Leakage Low Forward Voltage Drop High Current Capability Fast Switching Speed For High Efficiency

Operating Temperature: to +150C Storage Temperature: to +150C Maximum Recurrent Peak Reverse Voltage 800V 1000V Maximum RMS Voltage 560V 700V Maximum DC Blocking Voltage 800V 1000V

Average Forward IF(AV) = 55C Current Peak Forward Surge IFSM 150A 8.3ms, half sine Current IFM = 3.0A; Maximum 1.3V Instantaneous = 25C Forward Voltage Maximum DC Reverse Current = 25C Rated DC Blocking = 55C Voltage Maximum Reverse Recovery Time IR=1.0A, FR301-304 Trr 500ns FR306-307 Typical Junction CJ 65pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse Test: Pulse Width 300 sec, Duty Cycle 1%

Figure 1 Typical Forward Characteristics Amps 1.6.4.2.1.06.04.02.01.4.6.8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Amps 25C 3.0 Figure 2 Forward Derating Curve

Single Phase, Half Wave 60Hz Resistive or Inductive Load C Average Forward Rectified Current - Amperes versus Ambient Temperature 150 175

Junction Capacitance - pFversus Reverse Voltage - Volts
Figure 5 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 10 trr +0.5A

Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive


 

Related products with the same datasheet
FR302
FR303
FR304
FR305
FR306
FR307
Some Part number from the same manufacture Micro Commercial Components
FR301GP Package Type : DO-201AD, if : 3.0A, VRM : 50V
FR302
FR302GP
FR303
FR303GP
FR304
FR304GP
FR305
FR305GP
FR306
FR306GP
FR307
FR307GP
FR3A Package Type : Smc, if : 3.0A, VRM : 50V
FR601 Package Type : R-6, if : 6.0A, VRM : 50V
FR601GP
FR602
FR602GP
FR603
FR603GP
FR604

BZX84B4V7-E8 : 43 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS

MB2M-BP : 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 35000 mA ; VBR: 200 volts ; RoHS Compliant: RoHS ; Package: ROHS COMPLIANT, PLASTIC, MB-1, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4

P4KE15CA-LF : 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41 Specifications: Configuration: Single ; Direction: Bidirectional ; Package: PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 14.3 to 15.8 volts ; RoHS Compliant: RoHS

P4KE27CA-BP : 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41 Specifications: Configuration: Single ; Direction: Bidirectional ; Package: PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 25.7 to 28.4 volts ; RoHS Compliant: RoHS

P4KE39A-AP : 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 Specifications: Configuration: Single ; Direction: Unidirectional ; Package: PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 37.1 to 41 volts ; RoHS Compliant: RoHS

1.5KE160C : 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE Specifications: Configuration: Single ; Direction: Unidirectional ; Package: PLASTIC PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 15.2 to 16.8 volts ; RoHS Compliant: RoHS

15KP180ACOX.250 : 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Unidirectional ; Package: ROHS COMPLIANT, PLASTIC, R-6, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 200 to 220 volts ; RoHS Compliant: RoHS

15KP24CA-TP : 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Bidirectional ; Package: ROHS COMPLIANT, PLASTIC, R-6, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 26.7 to 29.35 volts ; RoHS Compliant: RoHS

5KP43C-T3 : 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Bidirectional ; Package: ROHS COMPLIANT, PLASTIC, R-6, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 47.8 to 58.4 volts ; RoHS Compliant: RoHS

Same catergory

40L45CW : 5 to 100 Amp. 45V 40A Schottky Common Cathode Diode in a TO-247AC Package.

APT15D30K : . Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Ultrafast Recovery Times Soft.

BAS15 : BAS15; High-speed Diode. Product Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Hermetically sealed leaded glass SOD68 (DO-34) package High switching speed: max. 4 ns Continuous reverse voltage: max. 50 V Repetitive peak reverse voltage: max. 50 V Repetitive peak forward current: max. 225 mA. APPLICATIONS High-speed switching Protection diodes.

BUV61 : High Power NPN Silicon Transistor. NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL The is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. Symbol V CEV V CEO V EBO BM P Base.

CPD04 : . PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA x 25 MILS 9.5 MILS x 14.5 MILS - 2,000 GEOMETRY GROSS DIE PER 4 INCH WAFER 18,080 PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series The Typical Electrical Characteristics data for this chip is currently being.

IRF643 : N-channel Power MOSFETs, 18a, 150-200v.

MBRM130LT3 : 1A 30V Low VF Schottky Rectifier, Package: Powermite, Pins=2. The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop- reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same.

SF51 : Glass Passivated.

STE48NM60 : Medium Voltage. N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET.

0805J1000331FFT : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.00033 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-4 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

BCW65ALEADFREE : 800 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC PACKAGE-3.

BLY11.MOD : 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: PNP ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

CSTB567LEADFREE : SILICON, STABISTOR DIODE, DO-35. s: Diode Type: STABISTOR DIODE ; VF: 1.31 to 1.61 volts ; RoHS Compliant: RoHS.

FMV16N50E : 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.3800 ohms ; PD: 2160 milliwatts ; Package Type: TO-220, TO-220F(SLS), 3 PIN ; Number of units in IC: 1.

HD1A3M-AZ : 1 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN. on-chip resistor NPN silicon epitaxial transistor For mid-speed switching High current drives such as IC outputs and actuators available On-chip bias resistor Low power consumption during drive Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total.

MCR18EZHJLR100 : RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 600 ppm, 0.1 ohm, SURFACE MOUNT, 1206. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP ; Resistance Range: 0.1000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 600 ±ppm/°C ; Power Rating:.

SQJ410EP-T1-GE3 : 32 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0039 ohms ; Package Type: SO-8, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN ; Number of units in IC: 1.

16FDK207K : CAPACITOR, METALLIZED FILM, 160 V, 200 uF, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Capacitance Range: 200 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 160 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 70 C (-13 to 158 F).

 
0-C     D-L     M-R     S-Z