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Details, datasheet, quote on part number:S8050
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| Part: | S8050 |
| Category: | Discrete => Transistors => Bipolar |
| Description: | Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 625mW, Vceo : 25V, ic : 500mA |
| Company: | Micro Commercial Components |
| Datasheet: | Download S8050 datasheet File size : 123 kB |
| Request For quote: | Find where to buy S8050
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Datasheet text preview:
MCC
Features
· · · · · ·
omponents 20736 Marilla Street Chatsworth !"# $
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S8050
TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S8050
NPN Silicon Transistors
TO-9 2
A E
Pin Configuration
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VE B =3.0Vdc, IC=0) DC Current Gain (IC=50mAdc, V CE=1.0Vdc) DC Current Gain (IC=500mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) Rank Range B 85-160 C 120-200 Min 40 25 5.0 ------Max ------0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc
D
BE
B
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IE B O
C
ON CHARACTERISTICS
hFE(1) hFE(2) VCE(sat) VBE(sat) VE B 85 50 ------300 --0.6 1.2 1.4 ----Vdc Vdc Vdc
DIM A B C D E G
G
DIMENSIONS INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MIN 4.45 4.46 12.7 0.41 3.43 2.42 MM MAX 4.70 4.70 --0.63 3.68 2.67 NOTE
SMALL-SIGNAL CHARACTERISTICS
fT 150 --MHz
CLASSIFICATION OF HFE (1)
D 160-300
www.mccsemi.com
Revision: 2 2003/0630
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