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Details, datasheet, quote on part number:S9018
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| Part: | S9018 |
| Category: | Discrete => Transistors => Bipolar |
| Description: | Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 310mW, Vceo : 18V, ic : 50mA |
| Company: | Micro Commercial Components |
| Datasheet: | Download S9018 datasheet File size : 125 kB |
| Request For quote: | Find where to buy S9018
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Datasheet text preview:
MCC
Features
· · · · · ·
omponents 20736 Marilla Street Chatsworth !"# $
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S9018
TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9018
NPN Silicon Transistors
TO-9 2
A E
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=20Vdc, IE =0) Collector Cutoff Current (VCE=15Vdc, IB =0) Emitter Cutoff Current (VE B =3.0Vdc, IC=0) DC Current Gain (IC=1.0mAdc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=10mAdc, IB =1.0mAdc) Base-Emitter Saturation Voltage (IC=10mAdc, IB =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) F 54-80 G 72-108 H 97-146 Min 25 18 4.0 ------Max ------0.1 0.1 0.1 Units Vdc Vdc Vdc uAdc uAdc uAdc
D
BE
B
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IE B O
C
ON CHARACTERISTICS
hFE VCE(sat) VBE(sat) 28 ----270 0.5 1.4 --Vdc Vdc
G
DIMENSIONS INCHES DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MIN 4.45 4.46 12.7 0.41 3.43 2.42 MM MAX 4.70 4.70 --0.63 3.68 2.67 NOTE
SMALL-SIGNAL CHARACTERISTICS
fT 600 --MHz
CLASSIFICATION OF HFE (1)
Rank Range I 132-198 J 180-270
www.mccsemi.com
Revision: 2 2003/06/30
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