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Details, datasheet, quote on part number:US4881
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| Part: | US4881 |
| Category: | Sensors => Magnetic Sensors => Magnetics/Hall-Effect Sensors |
| Description: | Low Voltage High Sensitivity Latch |
| Company: | Melexis, Inc. |
| Datasheet: | Download US4881 datasheet File size : 427 kB |
| Request For quote: | Find where to buy US4881
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Datasheet text preview:
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· Features and Benefits
· · · · · Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 2.2V CMOS for optimum stability, quality, and cost Low IDD current
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Applications
Solid state switch Brushless DC motor commutation Speed sensing
Ordering Information
Part No. US4881 US4882 US4882 Temperature Suffix E (-40°C to 85°C) E (-40°C to 85°C) L (-40°C to 150°C) Package Code SO (SOT-23) or UA (TO-92) SO (SOT-23) or UA (TO-92) SO (SOT-23) or UA (TO-92)
Contact factory or sales representative for legacy temperature code options
Functional Diagram
Description
The US4881/4882 are bipolar Hall effect sensor IC's fabricated from mixed signal CMOS technology. Each incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. The design specifications and performance have been optimized for commutation applications in brushless DC motors and automotive speed sensing. The output transistor of the 4881 will be latched on (BOP) in the presence of a sufficiently strong South magnetic field facing the marked side of the package. Similarly, the output will be latched off (BRP) in the presence of a North field. The output transistor of the 4882 will switch on (BOP) near or after the South to North zero crossing transition of a multipole ring magnet field facing the marked side of the package. The output will switch off (BRP) near or after the zero crossing transition from South to North Field.
Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100 resistor in series with VDD is recommended.
The SOT-23 device is magnetically reversed from the UA package. The SOT-23 output transistor will be latched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the marked face.
Sep/02
901004881 Rev. 008
Page 1
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US4881 and US4882 Electrical Specifications
DC operating parameters: TA = 25oC, VDD = 12VDC (unless otherwise specified). Parameter Supply Voltage Supply Current Saturation Voltage Output Leakage Output Rise Time Output Fall Time
Symbol Test Conditions
V DD I DD VDS(on) IOFF tr tf Operating BBOP BMin
2.2 1.5
Typ
2.0 0.4 0.01 0.04
Max
18 5.0 0.5
Units
V mA V A
5.0
s s
0.18
U
S4881 Magnetic Specifications
Parameter Operating Point Release Point Hysteresis Operating Point Release Point Hysteresis Note: 1 mT = 10 Gauss. Symbol Test Conditions BOP B RP Bhys BOP B RP Bhys E/L UA, E/L SO, Ta= 25 Vdd=2.2 & 18 volts DC Vdd E/L UA, E/L SO, Ta= 25 Vdd=2.2 & 18 volts DC Vdd E/L UA, E/L SO, Ta= 25 Vdd=2.2 & 18 volts DC Vdd EUA, ESO, Ta= 85 Vdd=2.2 & 18 volts DC Vdd EUA, ESO, Ta= 85 Vdd=2.2 & 18 volts DC Vdd EUA, ESO, Ta= 85 Vdd=2.2 & 18 volts DC Vdd Min 0.5 -4.5 1.5 -1.0 -6.0 1.5 Typ 2.0 -2.0 4.0 2.0 -2.0 4.0 Max 4.5 -0.5 5.0 6.0 -1.0 5.5 Units mT mT mT mT mT mT
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Melexis does not assume any liability arising from the use of any product or application of any product or circuit described herein.
901004881 Rev. 008
Page 2
Sep/02
3
U
S4882 Magnetic Specifications
Parameter Operating Point Release Point Hysteresis Operating Point Release Point Hysteresis Operating Point Release Point Hysteresis Symbol Test Conditions BOP E/L UA, E/L SO, Ta= 25 Vdd=2.2 & 18 volts DC Vdd B RP E/L UA, E/L SO, Ta= 25 Vdd=2.2 & 18 volts DC Vdd Bhys E/L UA, E/L SO, Ta= 25 Vdd=2.2 & 18 volts DC Vdd BOP EUA, ESO, Ta= 85 Vdd=2.2 & 18 volts DC Vdd B RP EUA, ESO, Ta= 85 Vdd=2.2 & 18 volts DC Vdd Bhys EUA, ESO, Ta= 85 Vdd=2.2 & 18 volts DC Vdd BOP LUA, LSO, Ta=150°C, Vdd=2.2 & 18 volts DC Vdd B RP LUA, LSO, Ta=150°C, Vdd=2.2 & 18 volts DC Vdd Bhys LUA, LSO, Ta=150°C, Vdd=2.2 & 18 volts DC Vdd Min -2.0 -6.0 3.0 -3.0 -6.0 2.0 -3.5 -6.0 1.0 Typ 2.0 -2.0 4.0 2.0 -2.0 4.0 2.0 -2.0 4.0 Max 6.0 2.0 5.0 6.0 -3.0 5.5 6.0 3.5 5.5 Units mT mT mT mT mT mT mT mT mT
Absolute Maximum Ratings
Supply Voltage (Operating), VDD Supply Current (Fault), IDD Output Voltage, VOUT Output Current (Fault), IOUT Power Dissipation, PD Operating Temperature Range, TA Storage Temperature Range, TS Maximum Junction Temp, TJ 18V 50mA 18V 50mA 100mW -40 to 150°C -65 to 150°C 175°C
901004881 Rev. 008
Page 3
Sep/02
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