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Part: MAG90X95
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> LMOS (Lateral MOS)
-> Complementary
Description: Breakdown Voltage = 160V, ID= 8A, PD= 125WPackage Type : TO3 (4 Pin)
Company: Magnatec
Datasheet: Download MAG90X95 datasheet File size : 886 kB
Request For quote: Find where to buy MAG90X95
Datasheet text preview:
MAGNA
TEC
4 0 .0 3 (1.576) M ax. 4 .47 (0.176) R a d. 2 Pls.
MAG90X95 MAG91X96
MECHANICAL DATA Dimensions in mm
COMPLIMENTARY PAIR DUAL CHANNEL
POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
2 2 .2 3 (0.875) M ax.
1 1 .4 3 (0.450) 6 .3 5 (0.250) 1 2 .1 9 (0.48) 1 .6 3 (0.064) 1 1 .1 8 (0.44) 1 .52 (0.060)
1 .09 (0.043) 0 .97 (0.038) D ia . 3 0 .2 3 (1.190) 3 0 .0 7 (1.184) 72° 1 8° 1 1 .9 4 (0.470) D ia .
FEATURES
· HIGH SPEED SWITCHING · SEMEFAB DESIGNED AND DIFFUSED
1
2
4 .0 9 (0.161) 3 .8 4 (0.161) 2 Pls 7 .1 1 (0.280) 6 .8 6 (0.270)
· HIGH VOLTAGE (160V & 200V) · HIGH ENERGY RATING · ENHANCEMENT MODE · INTEGRAL PROTECTION
1 1 .3 0 (0.445) 1 0 .6 7 (0.420)
4
4 .88 (0.192) 4 .78 (0.188) 1 .88 (0.074) 1 .78 (0.070)
3
3 .56 (0.140) 3 .43 (0.135)
1 6 .9 7 (0.668) 1 6 .8 7 (0.664)
TO-3 (4 PIN Header)
Pin 1 - P-Ch Drain Pin 3 - N-Ch Gate Pin 2 - N-Ch Drain Pin 4 - P-Ch Gate Case - Source (common)
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain Source Voltage VGSS ID ID(PK) PD Tstg Tj RJC Magnatec. Gate Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction Case
Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
MAG90X95 ±160V ±8A ±8A @ Tcase = 25°C
MAG91X96 ±200V
±14V
125W 55 to 150°C 150°C 1°C/W
Prelim. 1/98
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain Source Breakdown Voltage Gate Source Breakdown Voltage Gate Source CutOff Voltage Drain Source Saturation Voltage
MAG90X95 MAG91X96
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
VGS = 10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 MAG90X95 MAG91X96 IG = ±100µA ID = 100mA ID = 8A VDS = 160V IDSX Drain Source CutOff Current VGS = 10V MAG90X95 VDS = 200V MAG91X96 yfs* Forward Transfer Admittance VDS = 10V ID = 3A 0.7
Min.
160 200 ±14 0.15
Typ.
Max.
Unit
V V
1.5 12 10
V V
mA 10 2 S
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turnon Time Turn-off Time VDS = 20V ID = 5A
Test Conditions
VDS = ±10V f = 1MHz
TYP.
N-Ch 500 300 10 100 50
TYP
P-Ch 734 300 26 12 60
Unit
pF
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle 2%.
DN GN
DP GP
S CASE
Magnatec.
Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 1/98
Others parts begin by ma
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