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Details, datasheet, quote on part number:27C256-12EVS
 
 
Part:27C256-12EVS
Category:Memory => EPROM => 8 Mb
Description:256k ( 32k X 8 ) CMOS EPROM
Company:Microchip Technology, Inc.
Datasheet:Download 27C256-12EVS datasheet   File size : 69 kB
Request For quote:  Find where to buy 27C256-12EVS
 



Datasheet text preview:
27C256
256K (32K x 8) CMOS EPROM
FEATURES
· High speed performance - 90 ns access time available · CMOS Technology for low power consumption - 20 mA Active current - 100 µA Standby current · Factory programming available · Auto-insertion-compatible plastic packages · Auto ID aids automated programming · Separate chip enable and output enable controls · High speed "express" programming algorithm · Organized 32K x 8: JEDEC standard pinouts - 28-pin Dual-in-line package - 32-pin PLCC Package - 28-pin SOIC package - 28-pin Thin Small Outline Package (TSOP) - 28-pin Very Small Outline Package (VSOP) - Tape and reel · Data Retention > 200 years · Available for the following temperature ranges: - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C - Automotive: -40°C to +125°C

PACKAGE TYPES
TSOP
AE A1 1 A9 A8 A13 V14
CC

2 1 3 4 5 6 7 8 9 1 10 11 12 13 4

28 27 26 25 24 23 22 21 10 19 18 17 16 5

C A10 DE D7 D6 D5 D4 V3 DSS D2 D1 A0 A0 A1 2

27C256

V
A PP

A2 1 A7 A6 A5 A4 3

PLCC
3 4 2 1 32 31 3 0

A7 V12 NPP VU Acc A14 13

A6 A5 A4 A3 A2 A1 N0 OC 0

6 5 7 8

29 28 27

9 1 10 11 12 3 14 15 16

26 25 24 23 22 1

A8 A9 N11 OC AE C10 OE O7 6

17

18

29

DIP/SOIC
O
VPP AA2 1 A7 A6 A5 A4 A3 A2 A1 O0 O0 O1 V2
SS

O1 V2 NS S OU O3 O4 5
2 1 3 4 5 6 7 8 9 1 10 11 12 13 4

DESCRIPTION
The Microchip Technology Inc. 27C256 is a CMOS 256K bit electrically Programmable Read Only Memory (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. This very high speed device allows the most sophisticated microprocessors to run at full speed without the need for WAIT states. CMOS design and processing enables this part to be used in systems where reduced power consumption and reliability are requirements. A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, SOIC, VSOP or TSOP packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.

28 27 26 25 24 23 22 21 10 19 18 17 16 5

0

27C256 27C256

V ACC A14 A13 A8 A9 O11 AE C10 OE O7 O6 O5 O4 3

VSOP
AE O A1 1 A9 8 A13 V14
CC

VPP AA2 1 7 A6 5 A4 3

22 23 4 25 26 27 8 2 1 3 4 5 7 6

21 10 9 18 7 16 5 14 13 2 11 9 0 8

C A10 E O7 6 A O5 O4 3 VSS O2 O1 0 A0 1 A2

27C256

© 1996 Microchip Technology Inc.

DS11001L-page 1

This document was created with FrameMaker 4 0 4

27C256
1.0
1.1

ELECTRICAL CHARACTERISTICS
Maximum Ratings*

TABLE 1-1:
Name A0-A14 CE OE VPP O0 - O7 VCC VSS NC NU

PIN FUNCTION TABLE
Function Address Inputs Chip Enable Output Enable Programming Voltage Data Output +5V Power Supply Ground No Connection; No Internal Connection Not Used; No External Connection Is Allowed

VCC and input voltages w.r.t. VSS ........ -0.6V to +7.25V VPP voltage w.r.t. VSS during programming ...... -0.6V to +14.0V Voltage on A9 w.r.t. VSS .... -0.6V to +13.5V Output voltage w.r.t. VSS ...... -0.6V to VCC +1.0V Storage temperature .. -65°C to +150°C Ambient temp. with power applied ..... -65°C to +125°C
*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

TABLE 1-2:

READ OPERATION DC CHARACTERISTICS
VCC = +5V (±10%) Commercial: Industrial: Extended (Automotive): Tamb = 0°C to +70°C Tamb = -40°C to +85°C Tamb = -40°C to +125°C Conditions

Parameter Input Voltages Input Leakage Output Voltages Output Leakage Input Capacitance Output Capacitance Power Supply Current, Active

Part* all all all all all all C I,E

Status Logic "1" Logic "0" -- Logic "1" Logic "0" -- -- -- TTL input TTL input

Symbol VIH VIL ILI VOH VOL ILO CIN COUT ICC1 ICC2

Min. 2.0 -0.5 -10 2.4

Max. VCC+1 0.8 10 0.45

Units V V µA V V µA pF pF mA mA

VIN = 0 to VCC IOH = -400 µA IOL = 2.1 mA VOUT = 0V to VCC VIN = 0V; Tamb = 25°C; f = 1 MHz VOUT = 0V; Tamb = 25°C; f = 1 MHz VCC = 5.5V; VPP = VCC f = 1 MHz; OE = CE = VIL; IOUT = 0 mA; VIL = -0.1 to 0.8V; VIH = 2.0 to VCC; Note 1

-10 -- -- -- --

10 6 12 20 25

Power Supply Current, Standby IPP Read Current VPP Read Voltage

C I, E all all all

TTL input TTL input CMOS input Read Mode Read Mode

ICC(S)

--

2 3 100 100 VCC

mA mA µA µA V

CE = VCC ± 0.2V VPP = 5.5V

IPP VPP

VCC-0.7

* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges

Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.

DS11001L-page 2

© 1996 Microchip Technology Inc.

27C256
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V 1 TTL Load + 100 pF 10 ns Commercial: Tamb = 0°C to +70°C Industrial: Tamb = -40°C to +85°C Automotive: Tamb = -40°C to +125°C Units Conditions Min Address to Output Delay CE to Output Delay OE to Output Delay CE or OE to O/P High Impedance Output Hold from Address CE or OE, whichever goes first tACC tCE tOE tOFF tOH -- -- -- 0 0 Max 90 90 40 30 -- Min -- -- -- 0 0 Max 100 100 45 30 -- Min -- -- -- 0 0 Max 120 120 55 35 -- Min -- -- -- 0 0 Max Min 150 150 65 50 -- -- -- -- 0 0 Max 200 200 75 55 -- ns ns ns ns ns CE=OE =VIL OE = VIL CE = VIL

27C256-90* 27C256-10* 27C256-12 27C256-15 27C256-20 Parameter Sym

* -10, -90 AC Testing Waveform: VIH = 2.4V and VIL = .45V; VOH = 1.5V and VOL = 1.5V Output Load: 1 TTL Load + 30pF

FIGURE 1-1:
VIH Address VIL VIH CE VIL

READ WAVEFORMS

Address Valid

t CE(2)

VIH OE VIL VOH VOL t ACC t OE(2) High Z t OFF(1,3) t OH Valid Output High Z

Outputs O0 - O7

Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed up to t CE - t OE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested.

© 1996 Microchip Technology Inc.

DS11001L-page 3

27C256
TABLE 1-4: PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25°C ± 5°C VCC = 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V Parameter Input Voltages Input Leakage Output Voltages VCC Current, program & verify VPP Current, program A9 Product Identification Status Logic"1" Logic"0" -- Logic"1" Logic"0" -- -- -- Symbol VIH VIL ILI VOH VOL ICC2 IPP2 VH Min 2.0 -0.1 -10 2.4 0.45 -- -- 11.5 20 25 12.5 Max. VCC+1 0.8 10 Units V V µA V V mA mA V VIN = 0V to VCC IOH = -400 µA IOL = 2.1 mA Note 1 Note 1 Conditions

Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP

TABLE 1-5:

PROGRAMMING AC CHARACTERISTICS
AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V Output Load: 1 TTL Load + 100pF Ambient Temperature: Tamb=25°C ± 5°C VCC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V Symbol tAS tDS tDH tAH tDF tVCS tPW tCES tOES tVPS tOE Min. 2 2 2 0 0 2 95 2 2 2 -- Max. -- -- -- -- 130 -- 105 -- -- -- 100 Units µs µs µs µs ns µs µs µs µs µs ns 100 µs typical Remarks

for Program, Program Verify and Program Inhibit Modes

Parameter Address Set-Up Time Data Set-Up Time Data Hold Time Address Hold Time Float Delay (2) VCC Set-Up Time Program Pulse Width (1) CE Set-Up Time OE Set-Up Time VPP Set-Up Time Data Valid from OE

Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%. 2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no longer driven (see timing diagram).

DS11001L-page 4

© 1996 Microchip Technology Inc.

27C256
FIGURE 1-2: PROGRAMMING WAVEFORMS

Program VIH Address VIL t AS VIH Data VIL t DS 13.0V(2) VPP 5.0V 6.5V(2) VCC 5.0V VIH CE VIL VIH OE VIL t PW t OES t OE (1) tVCS tVPS Data Stable t DH High Z Address Stable

Verify

t AH Data Out Valid t DF (1)

Notes:

(1) t DF and tOE are characteristics of the device but must be accommodated by the programmer (2) VCC = 6.5 V ±0.25V, VPP = VH = 13.0V ±0.25V for express algorithm

TABLE 1-6:

MODES
CE VIL VIL VIH VIH VIH VIL VIL OE VIL VIH VIL VIH X VIH VIL VPP VCC VH VH VH VCC VCC VCC A9 X X X X X X VH O0 - O7 DOUT DIN DOUT High Z High Z High Z Identity Code

Operation Mode Read Program Program Verify Program Inhibit Standby Output Disable Identity
X = Don't Care

1.2

Read Mode

(See Timing Diagrams and AC Characteristics) Read Mode is accessed when: a) b) the CE pin is low to power up (enable) the chip the OE pin is low to gate the data to the output pins

For Read operations, if the addresses are stable, the address access time (tACC) is equal to the delay from CE to output (tCE). Data is transferred to the output after a delay from the falling edge of OE (tOE).

© 1996 Microchip Technology Inc.

DS11001L-page 5