|
|
Part: MT28F400B5WG-8B
Category:
Memory
-> Flash
-> 4 Mb
-> Boot Block
Description: 4Mb Smart 5 Boot Block Flash Memory, 40-pin Tsop I, 44-pin Sop, 48-pin Tsop I, 0.18um Process Technology
Company: Micron Semiconductor Products, Inc.
Datasheet: Download MT28F400B5WG-8B datasheet File size : 28 kB
Request For quote: Find where to buy MT28F400B5WG-8B
Datasheet text preview:
4Mb SMART 5 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
FEATURES
· Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks · Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/production programming1 · Advanced 0.18µm CMOS floating-gate process · Compatible with 0.3µm Smart 5 device · Address access time: 80ns · 100,000 ERASE cycles · Industry-standard pinouts · Inputs and outputs are fully TTL-compatible · Automated write and erase algorithm · Two-cycle WRITE/ERASE sequence · Byte- or word-wide READ and WRITE (MT28F400B5, 256K x 16/512K x 8) · Byte-wide READ and WRITE only (MT28F004B5, 512K x 8) · TSOP and SOP packaging options
MT28F004B5 MT28F400B5
5V Only, Dual Supply (Smart 5) 0.18µm Process Technology
40-Pin TSOP Type I
48-Pin TSOP Type I
44-Pin SOP2
GENERAL DESCRIPTION
The MT28F004B5 (x8) and MT28F400B5 (x16, x8) are nonvolatile, electrically block-erasable (Flash), programmable, read-only memories containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron's advanced 0.18µm CMOS floating-gate process. The MT28F004B5 and MT28F400B5 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Please refer to Micron's Web site (www.micron.com/ flash) for the latest data sheet.
OPTIONS
· Timing 80ns access · Configurations 512 K x 8 256K x 16/512K x 8 · Boot Block Starting Word Address Top (3FFFFh) Bottom (00000h) · Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) · Packages MT28F400B5 Plastic 44-pin SOP (600 mil) Plastic 48-pin TSOP Type I MT28F004B5 Plastic 40-pin TSOP Type I
Notes:
MARKING
-8 MT28F004B5 MT28F400B5 T B None ET SG2 WG VG
1. This generation of devices does not support 12V VPP compatibility production programming; however, 5V VPP application production programming can be used with no loss of performance. 2. Contact factory for availability.
Part Number Example:
MT28F400B5WG-8 T
4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
1
©2002, Micron Technology Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
4Mb SMART 5 BOOT BLOCK FLASH MEMORY
Pin Assignment (Top View) 48-Pin TSOP Type I
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# VPP WP# NC NC A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/(A-1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0
VPP WP# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44-PIN SOP1
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/(A-1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
Order Number and Part Marking MT28F400B5WG-8 B MT28F400B5WG-8 T MT28F400B5WG-8 BET MT28F400B5WG-8 TET
DQ11
Order Number and Part Marking MT28F400B5SG-8 B MT28F400B5SG-8 T MT28F400B5SG-8 BET MT28F400B5SG-8 TET
40-Pin TSOP Type I
A16 A15 A14 A13 A12 A11 A9 A8 WE# RP# VPP WP# A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 VSS NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0
Order Number and Part Marking MT28F004B5VG-8 B MT28F004B5VG-8 T MT28F004B5VG-8 BET MT28F004B5VG-8 TET Notes: 1. Contact factory for availability.
4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
2
©2002, Micron Technology Inc.
4Mb SMART 5 BOOT BLOCK FLASH MEMORY
Functional Block Diagram
8 Input Buffer
BYTE#1
I/O Control Logic 7 16KB Boot Block 18 (19) 9 8KB Parameter Block 8KB Parameter Block 96KB Main Block Input Buffer A-1 Input Data Latch/Mux 16 128KB Main Block Command Execution Logic State Machine YDecoder 7 Y - Select Gates 8 VPP Switch/ Pump Sense Amplifiers Write/Erase-Bit Compare and Verify X - Decoder/Block Erase Control Input Buffer
Addr.
A0A17/(18) A9
Buffer/ Latch
9
(10)
Addr. Power (Current) Control Counter
128KB Main Block
DQ15/(A - 1)1 DQ8DQ141
128KB Main Block
WP# CE# OE# WE# RP# VCC VPP
DQ0DQ7
Output Buffer DQ15
Status Register
Identification Register
7
Output Buffer
8 Output Buffer MUX
8
Notes: 1. Does not apply to MT28F004B5.
4Mb Smart 5 Boot Block Flash Memory MT28F004B5_3.fm - Rev. 3, Pub. 8/2002
3
©2002, Micron Technology Inc.
Others parts begin by mt
|
|
|
