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Details, datasheet, quote on part number:MT8VDDT3264AG-26A__
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Datasheet text preview:
128MB, 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMM
DDR SDRAM DIMM
Features
· 184-pin dual in-line memory module (DIMM) · Fast data transfer rates: PC1600, PC2100, or PC2700 · Utilizes 200 MT/s, 266 MT/s, and 333 MT/s DDR SDRAM components · 128MB (16 Meg x 64), 256MB (32 Meg x 64), and 512MB (64 Meg x 64) · VDD = VDDQ = +2.5V · VDDSPD = +2.3V to +3.6V · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with data for WRITEs · Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Bidirectional data strobe (DQS) transmitted/ received with data--i.e., source-synchronous data capture · Differential clock inputs (CK and CK#) · Four internal device banks for concurrent operation · Programmable burst lengths: 2, 4, or 8 · Auto precharge option · Auto Refresh and Self Refresh Modes · 15.625µs (128MB), 7.8125µs (256MB, 512MB) maximum average periodic refresh interval · Serial Presence Detect (SPD) with EEPROM · Programmable READ CAS latency · Gold edge contacts
MT8VDDT1664A 128MB MT8VDDT3264A 256MB MT8VDDT6464A 512MB
For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds
Figure 1: 184-Pin DIMM (MO-206)
1.25in. (31.75mm)
OPTIONS
MARKING
· Package 184-pin DIMM (standard) G 1 Y 184-pin DIMM (lead-free) 2 · Memory Clock/Speed, CAS Latency 6ns (167 MHz), 333 MT/s, CL = 2.5 -335 7.5ns (133 MHz), 266 MT/s, CL = 2 -262 7.5ns (133 MHz), 266 MT/s, CL = 2 -26A 7.5ns (133 MHz), 266 MT/s, CL = 2.5 -265 10ns (100 MHz), 200 MT/s, CL = 2 -202 · PCB 1.25in. (31.75mm) See page 2 note
NOTE: 1. Consult Micron for availability of Lead-free products. 2. CL = CAS (READ) Latency
Table 1:
Address Table
128MB 256MB 8K 8K (A0A12) 4 (BA0, BA1) 32 Meg x 8 1K (A0A9) 1 (S0#) 512MB 8K 8K (A0A12) 4 (BA0, BA1) 64 Meg x 8 2K (A0A9, A11) 1 (S0#) 4K 4K (A0A11) 4 (BA0, BA1) 16 Meg x 8 1K (A0A9) 1 (S0#)
Refresh Count Row Addressing Device Bank Addressing Device Configuration Column Addressing Module Rank Addressing
09005ae f80867a9 9 DD8C16_32_64x64AG_A.fm - Rev. A 8/03 EN
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©2003 Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
128MB, 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMM
Table 2: Part Numbers and Timing Parameters
MO DULE DENSITY 128MB 128MB 128MB 128MB 128MB 128MB 128MB 128MB 128MB 128MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB MODULE BANDWITH 2.7GB/s 2.7GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 1.6GB/s 1.6GB/s 2.7GB/s 2.7GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 1.6GB/s 1.6GB/s 2.7GB/s 2.7GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 2.1GB/s 1.6GB/s 1.6GB/s MEMORYCLOCK/ DATA RATE 6ns/333MT/s 6ns/333MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 10ns/200MT/s 10ns/200MT/s 6ns/333MT/s 6ns/333MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 10ns/200MT/s 10ns/200MT/s 6ns/333MT/s 6ns/333MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 7.5ns/266MT/s 10ns/200MT/s 10ns/200MT/s LATENCY (CL - TRCD - TRP) 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2
PARTNUMBER MT8VDDT1664AG-335__ MT8VDDT1664AY-335__ MT8VDDT1664AG-262__ MT8VDDT1664AY-262__ MT8VDDT1664AG-26A__ MT8VDDT1664AY-26A__ MT8VDDT1664AG-265__ MT8VDDT1664AY-265__ MT8VDDT1664AG-202__ MT8VDDT1664AY-202__ MT8VDDT3264AG-335__ MT8VDDT3264AY-335__ MT8VDDT3264AG-262__ MT8VDDT3264AY-262__ MT8VDDT3264AG-26A__ MT8VDDT3264AY-26A__ MT8VDDT3264AG-265__ MT8VDDT3264AY-265__ MT8VDDT3264AG-202__ MT8VDDT3264AY-202__ MT8VDDT6464AG-335__ MT8VDDT6464AY-335__ MT8VDDT6464AG-262__ MT8VDDT6464AY-262__ MT8VDDT6464AG-26A__ MT8VDDT6464AY-26A__ MT8VDDT6464AG-265__ MT8VDDT6464AY-265__ MT8VDDT6464AG-202__ MT8VDDT6464AY-202__
NO TE:
CONFIGURATION 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 16 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 32 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT8VDDT3264AG-265A1.
09005ae f80867a9 9 DD8C16_32_64x64AG_A.fm - Rev. A 8/03 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc.
128MB, 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMM
Table 3: Pin Assignment (184-Pin DIMM Front)
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 DQ17 DQS2 VSS A9 DQ18 A7 VDDQ DQ19 A5 DQ24 VSS DQ25 DQS3 A4 VDD DQ26 DQ27 A2 VSS A1 DNU DNU VDD 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 DNU A0 DNU VSS DNU BA1 DQ32 VDDQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VDDQ WE# DQ41 CAS# VSS DQS5 DQ42 DQ43 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 VDD NC DQ48 DQ49 VSS CK2# CK2 VDDQ DQS6 DQ50 DQ51 VSS NC DQ56 DQ57 VDD DQS7 DQ58 DQ59 VSS NC SDA SCL
Table 4:
Pin Assignment (184-Pin DIMM Back)
162 DQ47 163 NC 164 VDDQ 165 DQ52 166 DQ53 167 NC 168 VDD 169 DQS15/DM6 170 DQ54 171 DQ55 172 VDD 173 NC 174 DQ60 175 DQ61 176 VSS 177 DQS16/DM7 178 DQ62 179 DQ63 180 VDDQ 181 SA0 182 SA1 183 SA2 184 VDDSPD
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
NO TE:
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 93 VSS 116 VSS 139 VSS 94 DQ4 117 DQ21 140 DNU 95 DQ5 118 A11 141 A10 96 VDDQ 119 DQS11/DM2 142 DNU 97 DQS9/DM0 120 VDD 143 VDDQ 98 DQ6 121 DQ22 144 DNU 99 DQ7 122 A8 145 VSS 100 VSS 123 DQ23 146 DQ36 101 NC 124 VSS 147 DQ37 102 NC 125 A6 148 VDD DQS13/DM4 103 NC 126 DQ28 149 104 VDDQ 127 DQ29 150 DQ38 105 DQ12 128 VDDQ 151 DQ39 106 DQ13 129 DQS12/DM3 152 VSS DQS10/DM1 130 107 A3 153 DQ44 108 VDD 131 DQ30 154 RAS# 109 DQ14 132 VSS 155 DQ45 110 DQ15 133 DQ31 156 VDDQ 111 DNU 134 DNU 157 S0# 112 VDDQ 135 DNU 158 DNU 113 NC 136 VDDQ 159 DQS14/DM5 114 DQ20 137 CK0 160 VSS 115 NC/A12 138 CK0# 161 DQ46
VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC NC VSS DQ8 DQ9 DQS1 VDDQ CK1 CK1# VSS DQ10 DQ11 CKE0 VDDQ DQ16
Pin 115 is "No Connect" for 128MB, "A12" for 256MB and 512MB.
Figure 2: 184-Pin DIMM Pin Locations
Front View
U10
U1
U2
U3
U4
U6
U7
U8
U9
PIN 1
PIN 52
PIN 53
PIN 92
Back View
No Components This Side of Module
PIN 184
PIN 145
PIN 144
PIN 93
Indicates a VDD or VDDQ pin
Indicates a VSS pin
09005ae f80867a9 9 DD8C16_32_64x64AG_A.fm - Rev. A 8/03 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc.
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