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Part: MT9VDDT3272HIY-265__
Category:
Memory
-> DRAM
-> DDR SDRAM
-> Modules
-> 256 MB
Description: 200-Pin DDR Sdram Sodimms, Unbuffered, Ecc, (x72)
Company: Micron Semiconductor Products, Inc.
Datasheet: Download MT9VDDT3272HIY-265__ datasheet File size : 2802 kB
Request For quote: Find where to buy MT9VDDT3272HIY-265__
Datasheet text preview:
128MB, 256MB, 512MB, 1GB (x72, ECC) 200-PIN DDR SODIMM
DDR SDRAM SMALL-OUTLINE DIMM
Features
· 200-pin, small-outline, dual in-line memory module (SODIMM) · ECC, 1-bit error detection and correction · Fast data transfer rates: PC1600, PC2100, or PC2700 · Utilizes 200 MT/s, 266 MT/s, and 333 MT/s DDR SDRAM components or TwinDieÔ DDR SDRAM components · MT9VDDT1672H (16 Meg x 72), MT9VDDT3272H (32 Meg x 72), MT18VDDS6472H and MT9VDDT6472H (64 Meg x 72), and MT18VDDS12872H (128 Meg x 72) · VDD = VDDQ = +2.5V · VDDSPD = +2.3V to +3.6V · 2.5V I/O (SSTL_2 compatible) · Commands entered on each positive CK edge · DQS edge-aligned with data for READs; centeraligned with data for WRITEs
OPTIONS MARKING
MT9VDDT1672H 128MB, MT9VDDT3272H 256MB, MT18VDDS6472H 512MB, MT9VDDT6472H 512MB, MT18VDDS12872H 1GB (ADVANCE)
For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds
Figure 1: 200-Pin SODIMM (MO-224)
Standard 1.5in. (38.10mm)
Low Profile 1.25in. (31.75mm)
· Operating Temperature Range Commercial (0°C £ TA £ +70°C) None Industrial (-40°C £ TA £ +85°C) I3 · Package 200-pin SODIMM (standard) G 200-pin SODIMM (lead-free) Y · Frequency/CAS Latency 6.0ns (167 MHz) 333 MT/s CL = 2.51 -3352 7.5ns (133 MHz) 266 MT/s CL = 2 -262 7.5ns (133 MHz) 266 MT/s CL = 2 -26A 7.5ns (133 MHz) 266 MT/s CL = 2.5 -265 10ns (100 MHz) 200 MT/s CL = 2 - 202 · PCB Standard 1.5in. (38.10mm) See page 2 note See page 2 note Low Profile 1.25in. (31.75mm)3
NOTE: 1. CL = Device CAS (READ) Latency. 2. -335 and -262 speed grades available in singlerank module only. 3. Consult Micron for availability; industrial temperature option available in -265 speed only.
· Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle · Bidirectional data strobe (DQS) transmitted/received with data--i.e., source-synchronous data capture · Differential clock inputs CK and CK# · Four internal device banks for concurrent operation · Programmable burst lengths: 2, 4, or 8 · Auto precharge option · Auto Refresh and Self Refresh Modes · 15.625µs (MT9VDDT1672H), 7.8125µs (MT9VDDT3272H, MT18VDDS6472H, MT9VDDT6472H, and MT18VDDS12872H) maximum average periodic refresh interval · Serial Presence Detect (SPD) with EEPROM · Programmable READ CAS latency · Gold edge contacts
Table 1:
Address Table
MT9VDDT1672H 4K 4K (A0A11) 4 (BA0, BA1) 16 Meg x 8 1K (A0A9) 1 (S0#) MT9VDDT3272H MT18VDDS6472H 8K 8K 8K (A0A12) 8K (A0A12) 4 (BA0, BA1) 4 (BA0, BA1) 32 Meg x 8 32 Meg x 8 1K (A0A9) 1K (A0A9) 1 (S0#) 2 (S0#, S1#) MT9VDDT6472H 8K 8K (A0A12) 4 (BA0, BA1) 64 Meg x 8 2K (A0A9, A11) 1 (S0#) MT18VDDS12872H 8K 8K (A0A12) 4 (BA0, BA1) 64 Meg x 8 2K (A0A9, A11) 2 (S0#, S1#)
Refresh Count Row Addressing Device Bank Addressing Device Configuration Column Addressing Module Rank Addressing
09005aef806e057b DDS9_18C16_32_64_128X72HG_A.fm - Rev. A 7/03 EN
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©2003 Micron Technology, Inc.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON'S PRODUCTION DATA SHEET SPECIFICATIONS.
128MB, 256MB, 512MB, 1GB (x72, ECC) 200-PIN DDR SODIMM
Table 2: Part Numbers and Timing Parameters
MODULE DENSITY 128MB 128MB 128MB 128MB 128MB 128MB 128MB 128MB 128MB 128MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 256MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB 1GB 1GB 1GB 1GB 1GB 1GB CONFIGURATION 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 16 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 32 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 64 Meg x 72 128 Meg x 72 128 Meg x 72 128 Meg x 72 128 Meg x 72 128 Meg x 72 128 Meg x 72 MODULE BANDWIDTH 2.7 GB/s 2.7 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 1.6 GB/s 1.6 GB/s 2.7 GB/s 2.7 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 1.6 GB/s 1.6 GB/s 2.7 GB/s 2.7 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 1.6 GB/s 1.6 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 1.6 GB/s 1.6 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 2.1 GB/s 1.6 GB/s 1.6 GB/s MEMORY CLOCK/ DATA BIT RATE 6.0ns/333 MT/s 6.0ns/333 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s 6.0ns/333 MT/s 6.0ns/333 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s 6.0ns/333 MT/s 6.0ns/333 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s 10ns/200 MT/s 10ns/200 MT/s LATENCY (CL - tRCD - tRP) 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2 2-3-3 2-3-3 2.5-3-3 2.5-3-3 2-2-2 2-2-2
PART NUMBER MT9VDDT1672H(I)G-335__ MT9VDDT1672H(I)Y-335__ MT9VDDT1672H(I)G-262__ MT9VDDT1672H(I)Y-262__ MT9VDDT1672H(I)G-26A__ MT9VDDT1672H(I)Y-26A__ MT9VDDT1672H(I)G-265__ MT9VDDT1672H(I)Y-265__ MT9VDDT1672H(I)G-202__ MT9VDDT1672H(I)Y-202__ MT9VDDT3272H(I)G-335__ MT9VDDT3272H(I)Y-335__ MT9VDDT3272H(I)G-262__ MT9VDDT3272H(I)Y-262__ MT9VDDT3272H(I)G-26A__ MT9VDDT3272H(I)Y-26A__ MT9VDDT3272H(I)G-265__ MT9VDDT3272H(I)Y-265__ MT9VDDT3272H(I)G-202__ MT9VDDT3272H(I)Y-202__ MT18VDDS6472H(I)G-335__ MT18VDDS6472H(I)Y-335__ MT18VDDS6472H(I)G-262__ MT18VDDS6472H(I)Y-262__ MT18VDDS6472H(I)G-26A__ MT18VDDS6472H(I)Y-26A__ MT18VDDS6472H(I)G-265__ MT18VDDS6472H(I)Y-265__ MT18VDDS6472H(I)G-202__ MT18VDDS6472H(I)Y-202__ MT9VDDT6472H(I)G-26A__ MT9VDDT6472H(I)Y-26A__ MT9VDDT6472H(I)G-265__ MT9VDDT6472H(I)Y-265__ MT9VDDT6472H(I)G-202__ MT9VDDT6472H(I)Y-202__ MT18VDDS12872H(I)G-26A__ MT18VDDS12872H(I)Y-26A__ MT18VDDS12872H(I)G-265__ MT18VDDS12872H(I)Y-265__ MT18VDDS12872H(I)G-202__ MT18VDDS12872H(I)Y-202__
NO TE:
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT9VDDT3272HG-265A1.
09005aef806e057b DDS9_18C16_32_64_128X72HG_A.fm - Rev. A 7/03 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc.
128MB, 256MB, 512MB, 1GB (x72, ECC) 200-PIN DDR SODIMM
Table 3:
PIN SYMBOL 1 VREF 3 VSS 5 DQ0 7 DQ1 9 VDD 11 DQS0 13 DQ2 15 VSS 17 DQ3 19 DQ8 21 VDD 23 DQ9 25 DQS1 27 VSS 29 DQ10 31 DQ11 33 VDD 35 CK0 37 CK0# 39 VSS 41 DQ16 43 DQ17 45 VDD 47 DQS2 49 DQ18
NO TE:
Pin Assignment (200-Pin SODIMM Front)
PIN SYMBOL 51 VSS 53 DQ19 55 DQ24 57 VDD PIN SYMBOL 101 A9 103 Vss 105 A7 107 A5 A3 DQ25 109 DQS3 111 A1 VSS 113 VDD DQ26 115 A10 DQ27 117 BA0 VDD 119 WE# CB0 121 S0# CB1 123 NC VSS 125 VSS DQS8 127 DQ32 CB2 129 DQ33 VDD 131 VDD CB3 133 DQS4 NC 135 DQ34 VSS 137 VSS CK2 139 DQ35 CK2# 141 DQ40 VDD 143 VDD CKE1 145 DQ41 NC 147 DQS5 NC/A12 149 VSS PIN SYMBOL 151 DQ42 153 DQ43 155 Vdd 157 Vdd 159 VSS 161 VSS 163 DQ48 165 DQ49 167 VDD 169 DQS6 171 DQ50 173 VSS 175 DQ51 177 DQ56 179 VDD 181 DQ57 183 DQS7 185 VSS 187 DQ58 189 DQ59 191 VDD 193 SDA 195 SCL 197 VDDSPD 199 NC
Table 4:
PIN SYMBOL 2 VREF 4 VSS 6 DQ4 8 DQ5 10 VDD 12 DM0 14 DQ6 16 VSS 18 DQ7 20 DQ12 22 VDD 24 DQ13 26 DM1 28 VSS 30 DQ14 32 DQ15 34 VDD 36 VDD 38 VSS 40 VSS 42 DQ20 44 DQ21 46 VDD 48 DM2 50 DQ22
Pin Assignment (200-pin SODIMM Back)
PIN SYMBOL 52 VSS 54 DQ23 56 DQ28 58 VDD 60 DQ29 62 DM3 64 VSS 66 DQ30 68 DQ31 70 VDD 72 CB4 74 CB5 76 VSS 78 DM8 80 CB6 82 VDD 84 CB7 86 NC 88 VSS 90 VSS 92 VDD 94 VDD 96 CKE0 98 NC 100 A11 PIN SYMBOL 102 A8 104 VSS 106 A6 108 A4 110 A2 112 A0 114 VDD 116 BA1 118 RAS# 120 CAS# 122 S1# 124 NC 126 VSS 128 DQ36 130 DQ37 132 VDD 134 DM4 136 DQ38 138 VSS 140 DQ39 142 DQ44 144 VDD 146 DQ45 148 DM5 150 VSS PIN SYMBOL 152 DQ46 154 DQ47 156 VDD 158 CK1# 160 CK1 162 VSS 164 DQ52 166 DQ53 168 VDD 170 DM6 172 DQ54 174 VSS 176 DQ55 178 DQ60 180 VDD 182 DQ61 184 DM7 186 VSS 188 DQ62 190 DQ63 192 VDD 194 SA0 196 SA1 198 SA2 200 NC
59
61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99
Pin 99 is a No Connect for MT9VDDT1672H modules, or A12 for all other modules.
Figure 2: Module Layout
Standard 1.5in. (38.10mm) Front View Low-Profile 1.25in. (31.75mm) Front View
U1 U4
U3 U2 U5
U1
U2
U3
U4
U5
PIN 1
(all odd pins)
PIN 199
PIN 1
(all odd pins)
PIN 199
Back View
U8
U6
U9
Back View
U8
U6
U7
U9
U10
U7
U10
PIN 200
(all even pins)
PIN 2
Indicates a VDD or VDDQ pin
PIN 200
Indicates a VSS pin
(all even pins)
PIN 2
09005aef806e057b DDS9_18C16_32_64_128X72HG_A.fm - Rev. A 7/03 EN
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Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc.
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