Details, datasheet, quote on part number: 61048-102
Part61048-102
CategoryOptoelectronics => Photosensors => Phototransistors
Description(GS4123) Phototransistor in TO-46 Package With Flat Lens, Large Aperture
CompanyMicropac Industries, Inc.
DatasheetDownload 61048-102 datasheet
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Features, Applications

Features: Hermetically sealed High Sensitivity Base lead provided for conventional transistor biasing Wide receiving angle for easy alignment Spectrally Matched to the 62030 Series LED.

Applications: Incremental Encoding Reflective Sensors Position Sensors Level Sensors

DESCRIPTION This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large X 0.06") sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to MIL-PRF-19500.

ABSOLUTE MAXIMUM RATINGS Storage to +150C Operating Temperature (See part selection guide for actual operating temperature)...................................... to +125C Collector-Emitter Voltage........................................................................................................................................................ 50V Emitter-Collector Voltage.......................................................................................................................................................... 7V Continuous Collector Current..............................................................................................................................................50mA Power Dissipation (Derate at the rate of 2.5 mW/C above 25C)..................................................................................250mW Lead Soldering Temperature (1/16" from case for 10 seconds)........................................................................................ 240C Package Dimensions Schematic Diagram

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, (972) 272-3571 Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com

ELECTRICAL CHARACTERISTICS = 25C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX

Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Light Current Rise Time

Angular Response 10 NOTES: 1. Irradiance in mW/cm2 from tungsten source at a color temperature 2870K. 2. The angle between incidence for peak response and incidence for 50% of peak response.



PARAMETER Bias Voltage-Collector/Emitter Irradiance (H) SYMBOL IF H MIN 5 15 MAX 10 25 UNITS mA mW/cm2

PART NUMBER PART DESCRIPTION Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +100C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +100C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +100C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +100C) with 100% screening IL Range 50mA +50mA

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, (972) 272-3571 Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com


 

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