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Details, datasheet, quote on part number:1N5802-1
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| Part: | 1N5802-1 |
| Category: | Discrete => Diodes & Rectifiers => Fast Recovery Diodes |
| Description: | 2.5 Amps Fast Recovery Rectifier Chip 50 - 150 Volts |
| Company: | Microsemi Corporation |
| Datasheet: | Download 1N5802-1 datasheet File size : 48 kB |
| Request For quote: | Find where to buy 1N5802-1
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Datasheet text preview:
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
FEATURES:
· · · · · · · ·
JANHCE and JANKCE JANHCF and JANKCF
1N5802 1N5804 1N5806
Chip Outline Dimensions: 41 x 41 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 50,000à Nominal à Bonding Area: 23 x 23 mils Min. Back Metallization: Gold Junction Passivated with Thermal Silicon Dioxide - Planar Design Backside Available with Solderable Ag Backside as JANHCF or JANKCF
2.5 AMPS FAST RECOVERY RECTIFIER CHIP
50 - 150 VOLTS
Chip Type: RH
TYPE
JANHCE1N5802 JANHCE1N5804 JANHCE1N5806 JANKCE1N5802 JANKCE1N5804 JANKCE1N5806
VR
50V 100V 150V 50V 100V 150V
VBR
60V 110V 160V 60V 110V 160V
IO Tj = 75° C °
2.5A 2.5A 2.5A 2.5A 2.5A 2.5A
A
ELECTRICAL CHARACTERISTICS: CHARACTERISTICS:
CHARACTERISTIC
Reverse Current Rated VR, TC = 25° C ° Reverse Current Rated VR, TC = 100° C ° Forward Voltage Drop IF = 1A, TC = 25° C ° Junction Capacitance @ VR = 10V
SYMBOL
IR IR VF Cj
TYPICAL
.01 1.0 .80 15
MAX.
1 50 .875 25
UNITS
µA µA
Volts Pf
REVERSE RECOVERY CHARACTERISTICS: CHARACTERISTICS:
CHARACTERISTIC
Reverse Recovery Time IF = 0.5A, IR = 0.5A, IRR = 0.05A Forward Recovery Voltage @ 1A Trr = 8ns Forward Recovery Time IFM = 250 mA
SYMBOL
Trr Vrr
TYPICAL
20 1.5
MAX.
25 2.2 15
UNITS
ns V ns
MSC1344.PDF 02-23-99
JANHCE and JANKCE JANHCF and JANKCF
1N5802 1N5804 1N5806
GROUP A ELECTRICALS
TEST # 1 2 3 4 5 6 VFM1 VFM2 IR1 V(BR)1 SYMBOL
DRAWING NUMBER: MIL-S-19500/477 NUMBER:JANKCE1N5802/5804/5806 D00G1N5802/5804/5806KC TEST CONDITIONS SUBGROUP A2 IFM = 1.0 A IFM = 2.5 A VR = 50 V (5802) VR = 100 V (5804) VR = 150 V (5806) I(BR) = 100 µ A .875 .975 1.0 1N5802 1N5804 1N5806 60 110 160 V V
µA
MINIMUM
MAXIMUM
UNIT
V V V
7 8 9 IR2 SUBGROUP A3 VR = 50 V (5802) VR = 100 V (5804) VR = 150 V (5806) IFM = 1.0 A IFM = 1.0 A I(BR) = 100 µ A
TA = + 100° C ° TA = + 100° C ° TA = - 65° C ° TA = - 65° C ° 1N5802 1N5804 1N5806 50 100 150
50 0.800 1.075
µA
10 11 12
VFM3 VFM4 V(BR)2
V V V V V
13 14 15 16 17 18 trr CJ VFRM tfr SUBGROUP 4 IF = IR = 0.5 A IR M(REC) = 0.05 A VR = 10 V, tr = 8 nS tp 20 nS f = 1 Mhz IFM = 250 mA tr 8 nS VFR = 1.1 x VF IFM = 250 mA(pk) dl/dt = 65 A\us (min) 25 25 2.2 15 nS pF V nS Vsig = 50 mV (P-P) (MAX)
MSC1344.PDF 02-23-99
JANHCE and JANKCE JANHCF and JANKCF
1N5802 1N5804 1N5806
DIE DIMENSIONS:
MIL-PRF-19500/477C
A B
ANODE
BA
ANODE AL THICKNESS 45,000 Å MINIMUM
C
CATHODE AU THICKNESS 2500,
Å MINIMUM
1N5802, 1N5804, 1N5806
Dimensions Ltr A B C Notes: 1. Dimensions are in inches. 2. Metric equlvalents are given for general information only. Figure 7. JANC (E-version) die dimensions. Min .039 .031 .008 Inches Max .043 .035 .012 Millimeters Min Max 1.00 1.09 0.79 0.89 0.20 0.30
MSC1344.PDF 02-23-99
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