Details, datasheet, quote on part number: 1N6511J
CategoryDiscrete => Diodes & Rectifiers => Array Diodes
DescriptionDiode Array, Package : See_factory
CompanyMicrosemi Corporation
DatasheetDownload 1N6511J datasheet


Features, Applications
1N6511 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted a 14-PIN ceramic DIP package for use as steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see Figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching coredriver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting.

IMPORTANT: For the most current data, consult MICROSEMI's website:

Hermetic Ceramic Package Isolated Diodes to Eliminate Cross-Talk Voltages High Breakdown Voltage VBR 5 A Low Leakage IR< 40 V Low Capacitance 4.0 pF Switching Speeds less than 10 ns Options for screening in accordance with MIL-PRF19500/474 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate MX1N6511 for a JANTX screen.

High Frequency Data Lines & RS-422 Interface Networks Ethernet: 10 Base T Computer I/O Ports LAN Switching Core Drivers IEC 61000-4 Compatible (see circuit in figure 1) 61000-4-2 ESD: Air 15 kV, contact kW 61000-4-4 (EFT): ns 61000-4-5 (surge): 8/20 s

Reverse Breakdown Voltage of 75 Vdc (Note & 2) Continuous Forward Current mA dc (Note & 3) Peak Surge Current mA dc (Note 400 mW Power Dissipation per Junction 600 mW Power Dissipation per Package 25 C (Note 4) o Operating Junction Temperature range C o Storage Temperature range +200 C

NOTE 1: NOTE 2: NOTE 3: NOTE 4:. Each Diode Pulsed: 100 ms max; duty cycle <20% o Derate at 2.4 mA/ C above C o Derate at 4.8 mW/ C above +25 C

14-PIN Ceramic DIP Weight 2.05 grams (approximate) Marking: Logo, part number, date code Pin #1 to the left of the indent on top of package Carrier Tubes; 25 pcs (standard)

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
REVERSE RECOVERY TIME trr = 10 mAdc irr = 1 mAdc = 100 ohms ns
NOTE 1: Pulsed: s 50 s, duty cycle 90 s after leading edge.

Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Symbol VBR IR Ct DEFINITION Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.


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