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Details, datasheet, quote on part number:1N6660R
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| Part: | 1N6660R |
| Category: | Discrete => Diodes & Rectifiers => Schottky Barrier Rectifiers |
| Description: | Schottky Rectifier, Package : TO-254 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 1N6660R datasheet File size : 42 kB |
| Request For quote: | Find where to buy 1N6660R
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Datasheet text preview:
A Microsemi Company
580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: (617) 924-9280 FAX: (617) 924-1235
1N6660 1N6660R
MIL -S-19500/608
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Features
Low Reverse Leakage Low Forward Voltage Drop Guard Ring for Overvoltage Protection Isolated Hermetically Sealed Power Package Ceramic Seals for Improved Hermeticity Custom Lead Forming Available Eutectic Die Attach 150C Operating Temperature Space Level Screening Available Available in TO-254Z Packaging
30 Amp / 45 VOLTS COMMON CATHODE OR COMMON ANODE SCHOTTKY RECTIFIER
TO-254
45 V 45 V 45 V 15 A Note 1 300 Apk 2A
Maximum Ratings (per diode)
Peak Repetitive Reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Average Forward Current, 25 °C Peak Surge Forward Current @ tp = 8.3 ms, half sinewave, Io = 0; VRM = 0 Peak Reverse Surge Current @ tp = 30µs, VRSM = 54 V min, L = 260 µH Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating Junction Temperature Storage Temperature VRWM VRRM VR IO I FSM IRRM Rjc Rja Tj Tstg
1.65 °C/W 40°C/W -65°C to 150°C -65°C to 150°C
Electrical Characteristics
Parameter
Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Junction Capacitance
per diode @ 25°C Unless Otherwise Specified °
Symbol
VF
Typical
MA
0.55V 0.75V 1.0V 0.80V
Test Conditions
IF = 5 A; TJ = 25°C* IF = 15 A; TJ = 25°C* IF = 30 A; TJ = 25°C* IF = 15 A; TJ =- 55°C* TJ = 25°C TJ = 125°C
IR
50 µA
1 mA 40 mA
Cj
2000 pF
VR = 5 V, f = 1 MHz
*Pulse test: Pulse width 300 µsec, Duty cycle 2% Note: 1. Derate linearly @ 300mA/ °C from T J = TC = + 100°C to 150°C
MSC0268A.DOC REVISED: 05-01-97
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