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Details, datasheet, quote on part number:1N6857
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| Part: | 1N6857 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Barrier Rectifiers |
| Description: | Schottky Rectifier, Package : DO-35 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 1N6857 datasheet File size : 35 kB |
| Request For quote: | Find where to buy 1N6857
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Datasheet text preview:
· 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 · 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 · SCHOTTKY BARRIER DIODES · HERMETICALLY SEALED · METALLURGICALLY BONDED
1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Operating Current: 5711 types 2810,5712 & 6858 types 6857 TYPE Derating: all types:
:33mA dc@ TL = +130°C, L = 3/8" :75mA dc@ TL = +110°C, L = 3/8" :75mA dc@ TL = +70°C, L = 3/8" Derate to 0 (zero)mA@+150°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM REVERSE LEAKAGE CURRENT V MAXIMUM CAPACITANCE @ R = 0 VOLTS f = 1.0 MHZ C PICO FARADS 2.0 2.0 2.0 2.0 4.5 4.5 1 1 1 1 2 2 T ESDS CLASS
VBR @ 10 µ A VOLTS DSB2810 1N5711,-1 DSB5712 1N5712-1 1N6857-1 1N6858-1 20 70 20 20 20 70
V @ 1 mA F VOLTS 0.41 0.41 0.41 0.41 0.35 0.36
V @I F F MILLIAMPS 1.0@35 1.0@15 1.0@35 1.0@35 0.75@35 0.65@15
nA 100 200 150 150 150 200
I @V R R VOLTS 15 50 16 16 16 50
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 Outline LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 °C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 40 °C/W maximum POLARITY: Cathode end is banded.
NOTE:
Effective Minority Carrier Lifetime ( ) is 100 Pico Seconds
NOTICE:
Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway. Contact the factory for qualification completion dates. These two part numbers are being introduced by CDI as "drop-in" replacements for the 5711 and 5712. They provide a more robust mechanical design and a higher ESDS class with the only trade-off being an increase in capacitance.
MOUNTING POSITION: Any.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com
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1N5711, 1N5712, 1N6857, 1N6858 DSB5712 and DSB2810
INCLUDING -1 VERSIONS
100 IF FORWARD CURRENT (mA) IR REVERSE CURRENT (nA) 0 .2 .4 .6 .8 1.0 1.2
10,000
10
1000
1.0
100
.1
10
.01
1.0 0 5.0 10 15 20 25 30
VF FORWARD VOLTAGE (V) Figure 1. I-V Curve Showing Typical Forward Voltage Variation with Temperature for the DSB5712 and DSB2810 Schottky Diodes.
VR REVERSE VOLTAGE (V) (PULSED) Figure 2. DSB5712 and DSB2810 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
50 IF FORWARD CURRENT (mA) IR REVERSE CURRENT (nA)
100,000 RD DYNAMIC RESISTANCE (!!) 0 10 20 30 40 50 60
1000
10 5
10,000
1000
100
1 .5
1
.1 .05
10
10
.01 0 .2 .4 .6 .8 1.0 1.2
1
1 .1 1.0 10 100
VF FORWARD VOLTAGE (V) Figure 3. I-V Curve Showing Typical Forward Voltage Variation with Temperature for Schottky Diode 1N5711.
VR REVERSE VOLTAGE (V) (PULSED) Figure 4. 1N5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
IF FORWARD CURRENT (mA) (PULSED) Figure 5. Typical Dynamic Resistance (RD) vs. Forward Current (IF).
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