Qualified per MIL-PRF-19500/396 Devices 2N3764 2N3765 Qualified Level JAN JANTX JANTXV
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Total Power Dissipation +250C PT Top, Tstg Symbol 1.0 Operating & Storage Junction Temp. Range
0 Thermal Resistance Junction-to-Case 60 88 C/W RJC *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 1) Derate linearly 5.71 mW/0C for +250C 2) Derate linearly 2.86 mW/0C for > +250C
Collector-Emitter Breakdown Current = 10 mAdc Collector-Base Cutoff Current VCB = 20 Vdc VCB = 30 Vdc VCB = 40 Vdc VCB = 60 Vdc 2N3763, 2N3765 V(BR)CEO Vdc
Characteristics Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 20 Vdc VEB = 2.0 Vdc, VCE = 30 Vdc Emitter-Base Cutoff Current VEB = 2.0 Vdc VEB = 5.0 Vdc Symbol 2N3763, 2N3765 All Types 2N3763, 2N3765 ICEX Min. Max. Unit Adc
Forward-Current Transfer Ratio = 10 mAdc, VCE = 1.0 Vdc = 150 mAdc, VCE = 1.0 Vdc = 500 mAdc, VCE = 1.0 Vdc = 1.0 Adc, VCE = 1.5 Vdc = 1.5 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage = 10 mAdc, = 1.0 mAdc 150 m Adc, = 15 mAdc = 500 mAdc, = 50 mAdc = 1.0 Adc, = 100 mAdc Base-Emitter Saturation Voltage = 10 mAdc, = 1.0 mAdc 150 m Adc, = 15 mAdc = 500 mAdc, = 50 mAdc = 1.0 Adc, = 100 mAdc
Forward Current Transfer Ratio, Magnitude = 50 mAdc, VCE = 10 Vdc, = 100 MHz 2N3763, 2N3765
Output Capacitance VCB = 10 Vdc, 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, 0, 100 kHz f 1.0 MHz
Delay Time VCC = 30 Vdc, VEB = 0, Rise Time = 1.0 mAdc, = 100 mAdc Storage Time VCC = 30 Vdc, VEB = 0, Fall Time = 1.0 mAdc, = 100 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
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