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Details, datasheet, quote on part number:2N3763L
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| Part: | 2N3763L |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP |
| Description: | PNP Transistor, Package : TO-5 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N3763L datasheet File size : 61 kB |
| Request For quote: | Find where to buy 2N3763L
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Datasheet text preview:
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC
2N3762* 2N3764
40 40 5.0 1.5
2N3763* 2N3765
60 60
Unit
Vdc Vdc Vdc Adc
TO-39* (TO-205AD) 2N3762, 2N3763
2N3762* 1 2N3763*
1.0
2N3764 2 2N3765
0.5 W
0
Total Power Dissipation
@ TA = +250C
PT Top, Tstg Symbol
Operating & Storage Junction Temp. Range
-55 to +200 Max.
C
THERMAL CHARACTERISTICS Characteristics
Unit
TO-5* 2N3762L, 2N3763L
2N3762* 2N3763*
2N3764 2N3765
TO-46* (TO-206AB) 2N3764, 2N3765
*See appendix A for package outline
0 Thermal Resistance Junction-to-Case 60 88 C/W RJC *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 1) Derate linearly at 5.71 mW/0C for TA > +250C 2) Derate linearly at 2.86 mW/0C for TA > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 20 Vdc VCB = 30 Vdc VCB = 40 Vdc VCB = 60 Vdc 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765 V(BR)CEO 40 60 100 100 10 10 Vdc
ICBO
Adc µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 20 Vdc VEB = 2.0 Vdc, VCE = 30 Vdc Emitter-Base Cutoff Current VEB = 2.0 Vdc VEB = 5.0 Vdc Symbol 2N3762, 2N3764 2N3763, 2N3765 All Types 2N3762, 2N3764 2N3763, 2N3765 ICEX Min. Max. 100 100 200 10 10 Unit Adc
IEBO
Adc µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 1.0 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc IC = 1.5 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc 35 40 40 30 20 30 20
2N3762, 2N3764 2N3763, 2N3765 2N3762, 2N3764 2N3763, 2N3765
hFE
140 120 80
VCE(sat)
0.1 0.22 0.5 0.9 0.8 1.0 1.2 1.4
Vdc
VBE(sat) 0.9
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz 2N3762, 2N3764 2N3763, 2N3765
hfe
Cobo Cibo
t
1.8 1.5
6.0 6.0 25 80 8.0 35 80 35 pF pF s s s s
Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time VCC = 30 Vdc, VEB = 0, Rise Time IC = 1.0 mAdc, IB1 = 100 mAdc Storage Time VCC = 30 Vdc, VEB = 0, Fall Time IC = 1.0 mAdc, IB1 = 100 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%. d r t s t f
t
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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