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Details, datasheet, quote on part number:2N3767
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| Part: | 2N3767 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN |
| Description: | NPN Transistor, Package : TO-66 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N3767 datasheet File size : 55 kB |
| Request For quote: | Find where to buy 2N3767
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Datasheet text preview:
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg
2N3766
60 80 6.0 2.0 4.0 25
2N3767
80 100
Units
Vdc Vdc Vdc Adc Adc W
0
-65 to +200 Max. 7.0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W
TO-66* (TO-213AA)
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
*See Appendix A for Package Outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 V(BR)CEO 60 80 500 500 10 10 10 10 500 Vdc
ICEO
µAdc
ICEX
µAdc
ICBO IEBO
µAdc µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N3766, 2N3767 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (2)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 0.5 Adc, IB = 0.05 Adc Base-Emitter Voltage IC = 1.0 Adc, VCE = 10 Vdc
hFE
30 40 20
160
VCE(sat) VBE(on)
2.5 1.0 1.5
Vdc Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz f 1.0 MHz hfe Cobo 1.0 8.0 50 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc Turn-Off Time VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc
t
on
0.25 2.5
µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 6.25 Vdc, IC = 4.0 Adc Test 2 VCE = 20 Vdc, IC = 1.25 Adc Test 3 VCE = 50 Vdc, IC = 150 mAdc 2N3766 VCE = 65 Vdc, IC = 150 mAdc 2N3767 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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