|
Details, datasheet, quote on part number:2N3847
| |
| Part: | 2N3847 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN |
| Description: | NPN Transistor, Package : TO-63 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N3847 datasheet File size : 58 kB |
| Request For quote: | Find where to buy 2N3847
|
| |
Datasheet text preview:
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412 Devices 2N3846 2N3847 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg Symbol RJC
2N3846 200 300
2N3847 300 400
Units
Vdc Vdc Vdc Adc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Temperature Range
10 20 4.0 150 -65 to +200 Max. 0.5
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 26.6 mW/0C to +1750C 2) Derate linearly 2 W/0C to +1750C
*See Appendix A for Package Outline
TO-63*
0
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc; VBE = 0 VCE = 400 Vdc; VBE = 0 Collector-Emitter Cutoff Current VCE = 200 Vdc; IB = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5 250 Vdc
ICES
mAdc
ICEO IEBO
mAdc µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N3846, 2N3847 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 1 Adc; VCE = 3.0 Vdc IC = 5 Adc; VCE = 3.0 Vdc IC = 10 Adc; VCE = 3.0 Vdc Base-Emitter Voltage VCE = 3 Vdc; IC = 10 Adc Base-Emitter Saturated Voltage IB = 1.6 Adc; IC = 10 Adc Collector-Emitter Saturated Voltage IB = 1.6 Adc; IC = 10 Adc
hFE
70 40 12
240 60 1.20 1.30 0.75 Vdc Vdc Vdc
VBE VBE(sat) VCE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 5 Adc, VCE = 10 Vdc, f = 1 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
hfe
10 hfe Cobo 50 35 250 750 pF
SWITCHING CHARACTERISTICS
Turn-On Time VBE(off) ~ -7.5 Vdc; IC = 10 Adc; IB1 = 2 Adc; IB2 = -2 Adc; RL = 15 Turn-Off Time VBE(off) ~ -7.5 Vdc; IC = 10 Adc; IB1 = 2 Adc; IB2 = 2 Adc; RL = 15
t
on
4
µs
t
off
7
µs
SAFE OPERATING AREA
DC Tests TC = +1000C; VCE = 0 Vdc, IC = 0 Adc (See Figure 3 on Mil-PRF-19500/412) Test 1 VCE = 7.5 Vdc; IC = 20 Adc; tp = 1.0 s; 1 cycle Test 2 VCE = 200 Vdc; IC = 100 mAdc; tp = 1.0 s, 1 cycle Test 3 VCE = 58 Vdc; IC = 1.0 Adc; tp = 1.0 s, 1 cycle Burnout by Pulsing (2N3847 only) TC = +1000C; VCE = 300 Vdc; IC = 20 mAdc; tp = 1.0 s, 1 cycle Unclamped Inductive Sweep TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 4 on Mil-PRF-19500/412) Clamped Inductive Sweep TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 5 on Mil-PRF-19500/412) 3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
|
|
