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Details, datasheet, quote on part number:2N4930
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| Part: | 2N4930 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP |
| Description: | PNP Transistor, Package : TO-39 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N4930 datasheet File size : 56 kB |
| Request For quote: | Find where to buy 2N4930
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Datasheet text preview:
TECHNICAL DATA
PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Sym
VCEO VCBO VEBO IC PT TJ, Tstg
2N3743 2N4930 2N4931 Unit
300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C Unit C/W
@TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance Junction-to-Case RJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max. 35
0
TO-39* (TO-205AD)
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
*See appendix A for package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 1.0 mAdc 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 V(BR)CEO 300 200 250 300 200 250 5.0 250 250 250 Vdc
Collector-Emitter Breakdown Voltage IC = 100 µAdc
V(BR)CBO
Vdc
Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc
V(BR)EBO 2N3743 2N4930 2N4931
Vdc
ICBO
Adc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Emitter-Base Cutoff Current VEB = 4.0 Vdc Symbol IEBO Min. Max. 150 Unit Adc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 30 mAdc, VCE = 10 Vdc IC = 50 mAdc, VCE = 20 Vdc Collector-Emitter Saturation Voltage IC = 30 mAdc, IB = 3.0 mAdc IC = 10 mAdc, IB = 1.0 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc
hFE
30 40 40 50 30
200
VCE(sat)
1.2 1.0 1.0 1.2
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 20 Vdc, IE = 0, f 0.1 MHz Input Capacitance VEB = 1.0 Vdc, IC = 0, f 0.1 MHz hfe hfe Cobo Cibo 2.0 30 8.0 300 15 400 pF pF
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t 1.0 s Test 1 VCE = 20 Vdc, IC = 50 mAdc All Types Test 2 VCE = 100 Vdc, IC = 10 mAdc All Types Test 3 VCE = 300 Vdc, IC = 3.3 mAdc 2N3743 VCE = 200 Vdc, IC = 5.0 mAdc 2N4930 VCE = 250 Vdc, IC = 4.0 mAdc 2N4931 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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