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Details, datasheet, quote on part number: 2N5109
 
 
Part number2N5109
CategoryDiscrete => Transistors => Bipolar => RF => Amplifier
TitleAmplifier
DescriptionRF NPN Transistor
CompanyMicrosemi Corporation
DatasheetDownload 2N5109 datasheet
Request For QuoteFind where to buy 2N5109
 


 
Specifications, Features, Applications

Features

Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

D Total Device Dissipation 75C (1) Derate above 2.5 20 Watts mW/ C

Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC Value Typ. Max. 20 100 Unit Vdc A

HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 15.0 Vdc)

Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, = 200 MHz) Value Typ. 1200 Max. Unit MHz

Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain = 50 mAdc, VCE = 200 MHz = 50 mAdc, VCE = 200 MHz = 50 mAdc, VCE = 200 MHz Value Typ. 11.2 10.5 Max. Unit dB




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