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Part: 2N5154
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: NPN Transistor, Package : TO-39
Company: Microsemi Corporation
Datasheet: Download 2N5154 datasheet File size : 208 kB
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Datasheet text preview:
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544 Devices 2N5152 2N5152L 2N5154 2N5154L Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RJC
All Units
80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15
Units
Vdc Vdc Vdc Adc W W °C Unit C/W
TO- 5*
2N5152L, 2N5154L
@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 80 mW/0C for TC > +250C 4) This value applies for PW 8.3 ms, duty cycle 1%
0
2N5152, 2N5154
TO-39* (TO-205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO IEBO Min. 80 1.0 1.0 1.0 1.0 50 Max.
Unit Vdc µAdc mAdc µAdc mAdc µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Collector-Base Cutoff Current VCE = 40 Vdc, IB = 0
ICES ICEO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5152, 2N5154 JAN SERIES ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5 Vdc IC = 2.5 Adc, VCE = 5 Vdc 2N5152 2N5154 IC = 5 Adc, VCE = 5 Vdc 2N5152 2N5154 Collector-Emitter Saturation Voltage VCE = 5 Vdc, IC = 2.5 Adc IC = 5 Adc, IB = 500 Adc Base-Emitter Voltage non-saturated IC = 2.5 Adc, IB = 250 mAdc IC = 5 Adc, IB = 500 mAdc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5 Adc, IB = 500 mAdc VCE(sat) hFE 2N5152 2N5154 20 50 30 70 20 40 0.75 1.5 1.45 Vdc 90 200
VBE
Vdc
VBE(sat)
1.45 2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 500 mAdc, VCE = 5 Vdc, f = 10 MHz 2N5152 2N5154 Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 100 mAdc, VCE = 5 Vdc, f = 1 kHz 2N5152 2N5154 Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz
hfe
6 7
hfe
20 50 250 pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time IC = 5 Adc, IB1= 500 mAdc Turn-Off Time RL = 6 Storage Time IB2= -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc
t
on
0.5 1.5 1.4 0.5
µs µs µs µs
t
off
t t
s f
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t p= 1.0 s Test 1 VCE = 5.8Vdc, IC = 2.0 Adc Test 2 VCE = 32 Vdc, IC = 340 mAdc Test 3 VCE = 80 Vdc, IC = 20 mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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