|
|
Part: 2N5416
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Transistor, Package : TO-5
Company: Microsemi Corporation
Datasheet: Download 2N5416 datasheet File size : 66 kB
Request For quote: Find where to buy 2N5416
Datasheet text preview:
TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N5415
200 200
2N5416
300 350
Units
Vdc Vdc Vdc Adc W W 0 C Unit C/W
6.0 1.0 0.75 10 -65 to +200 Max. 17.5
TO- 5*
2N5415, 2N5416
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C
0
2N5415S, 2N5416S
TO-39* (TO-205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5415 2N5416 2N5416 50 1.0 50 1.0 20 50 50 50 50 500 500 µAdc mAdc µAdc mAdc µAdc µAdc µAdc µAdc
ICEO
IEBO 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 ICEX
ICBO1
ICBO2
µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Voltage IC = 50 mAdc, VCE = 10 Vdc
hFE VCE(sat) VBE Forward
30 15
120 2.0 1.5 Vdc Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz Forward Current Transfer Ratio IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 5.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
hfe
hfe Cobo Cibo
3.0 25
15
15 75
pF pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc Turn-Off Time VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
t
on
1.0 10
µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C; 1 Cycle; t = 0.4 s Test 1 VCE = 10 Vdc, IC = 1.0 Adc Test 2 VCE = 100 Vdc, IC = 100 mAdc Test 3 VCE = 200 Vdc, IC = 24 mAdc 2N5415 Test 4 VCE = 300 Vdc, IC = 10 mAdc 2N5416 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
|
|
|
