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Details, datasheet, quote on part number:2N5793
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| Part: | 2N5793 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Dual Transistors |
| Description: | NPN Dual Transistors, Package : TO-78 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N5793 datasheet File size : 129 kB |
| Request For quote: | Find where to buy 2N5793
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Datasheet text preview:
TECHNICAL DATA
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/495 Devices
2N5793 2N5794 2N5794U
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC
Value
40 75 6.0 600 One Total Section(1) Device(2) 0.5 0.6 -65 to +200
Units
Vdc Vdc Vdc mAdc
TO-78*
Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C
PT Top, Tstg
0
W C
6 PIN SURFACE MOUNT*
*See MILPRF19500/495 for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 40
Max.
Unit Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 75 Vdc VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 4.0 Vdc
10 10 10 10
ľAdc Adc ľAdc Adc
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203 Page 1 of 2
2N5793, 2N5794 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 100 ľAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 ľAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 300 mAdc, IB = 30 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 300 mAdc, IB = 30 mAdc 2N5793 hFE 20 25 35 40 25 20 35 50 75 100 40 50
120
2N5794 2N5794U
hFE
300
VCE(sat)
0.3 0.9 0.6 1.2 1.8 10 8.0 33
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
hfe
Cobo Cibo
t t
2.0
pF pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc (3) Pulse Test: Pulse Width = 300ľs, Duty Cycle 2.0%. on 45 310 s s
off
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203 Page 2 of 2
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