|
Details, datasheet, quote on part number:2N5796
| |
| Part: | 2N5796 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP => Dual Transistors |
| Description: | PNP Dual Transistors, Package : TO-78 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N5796 datasheet File size : 128 kB |
| Request For quote: | Find where to buy 2N5796
|
| |
Datasheet text preview:
TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496 Devices
2N5795 2N5796 2N5796U
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC @ TA = +250C
Value
60 60 5.0 600
Units
Vdc Vdc Vdc mAdc
TO-78*
One
Total Power Dissipation PT TJ, Tstg
(1)
Section 0.5
Both Sections 0.6
(2)
W
0
Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA +250C 2) Derate linearly 3.43 mW/0C for TA +250C
-65 to +175
C
6 PIN SURFACE MOUNT*
*See MILPRF19500/496 for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 60
Max.
Unit Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCBO = 60 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc
10 10 100 10
Adc ľAdc Adc ľAdc
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203 Page 1 of 2
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio IC = 100 ľAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 ľAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc 2N5795 hFE 40 40 40 40 20 20 75 100 100 100 50 50
150
2N5796 2N5796U hFE
300
VCE(sat)
0.4 1.6 1.3 2.6 2.0 10 8.0 25
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
hfe
Cobo Cibo
t t
pF pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc 1) Pulse Test: Pulse Width = 300ľs, Duty Cycle 2.0%. on 50 140 s s
off
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203 Page 2 of 2
|
|
