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Details, datasheet, quote on part number:2N6277
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| Part: | 2N6277 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN |
| Description: | NPN Transistor, Package : TO-3 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N6277 datasheet File size : 55 kB |
| Request For quote: | Find where to buy 2N6277
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Datasheet text preview:
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514 Devices 2N6274 2N6277 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT Tj, Tstg Symbol RJC
2N6274
100 120
2N6277
150 180
Unit
Vdc Vdc Vdc Adc Adc W W
0
@ TC = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range
6.0 20 50 250 143 -65 to +200 Max. 0.7
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
0
Unit C/W
TO-3* (TO-204AA)
*See appendix A for package outline
1) Derate linearly 1.43 W/0C between TC = +250C and TC = +2000C ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc VCE = 75 Vdc Collector-Emitter Cutoff Current VCE = 120 Vdc, VBE = -1.5 Vdc VCE = 180 Vdc, VBE = -1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 180 Vdc 2N6274 2N6277 2N6274 2N6277 2N6274 2N6277 V(BR)CEO 100 150 50 50 10 10 100 10 10 Vdc
ICEO
µAdc
ICEX IEBO
µAdc µAdc µAdc
2N6274 2N6277
ICBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N6274, 2N6277 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (2)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 4.0 Vdc IC = 20 Adc, VCE = 4.0 Vdc IC = 50 Adc, VCE = 4.0 Vdc Collector-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc IC = 50 Adc, IB = 10 Adc Base-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc
hFE
50 30 10
120
VCE(sat) VBE(sat)
1.0 3.0 1.8
Vdc Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz hfe Cobo 3.0 12 600 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 80 Vdc; IC = 20 Adc; IB = 2.0 Adc Turn-Off Time VCC = 80 Vdc; IC = 20 Adc; IB1 = -IB2 = 2.0 Adc
t
on
0.5 1.05
µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 5.0 Vdc, IC = 50 Adc Test 2 VCE = 8.6 Vdc, IC = 165 mAdc Test 3 VCE = 80 Vdc, IC = 29 mAdc
All Types All Types 2N6274
Test 4
VCE = 120 Vdc, IC = 110 mAdc 2N6277 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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