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Details, datasheet, quote on part number:2N6283
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| Part: | 2N6283 |
| Category: | Discrete => Transistors => Bipolar => Darlington => NPN |
| Description: | NPN Darlington Transistor, Package : TO-3 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N6283 datasheet File size : 55 kB |
| Request For quote: | Find where to buy 2N6283
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Datasheet text preview:
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/504 Devices 2N6283 2N6284 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1)
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RJC
2N6583
80 80
2N6284
100 100
Unit
Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range
7.0 0.5 20 175 87.5 -65 to +200 Max. 0.857
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
0
TO-3* (TO-204AA)
*See appendix A for package outline
1) Derate linearly @ 1.17 W/0C above TC > +250C ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 40 Vdc VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 2N6283 2N6284 2N6283 2N6284 2N6283 2N6284 V(BR)CEO 80 100 1.0 1.0 5.0 5.0 2.5 Vdc
ICEO
mAdc
ICEX IEBO
mAdc mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N6283, 2N6284 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (2)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 3.0 Vdc IC = 10 Adc, VCE = 3.0 Vdc IC = 20 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 20 Adc, IB = 200 mAdc IC = 10 Adc, IB = 40 mAdc Base-Emitter Saturation Voltage IC = 20 Adc, IB = 200 mAdc Base-Emitter Voltage IC = 10 Adc, VCE = 3.0Vdc
hFE
1,500 1,250 500
18,000
VCE(sat) VBE(sat) VBE
3.0 2.0 4.0 2.8
Vdc Vdc Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe hfe Cobo 8.0 700 300 pF 80
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 10 Adc; IB = 40 mAdc Turn-Off Time VCC = 30 Vdc; IC = 10 Adc; IB1 = IB2 = 40 mAdc
t
on
2.0 10
µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 8.75 Vdc, IC = 20 Adc Test 2 VCE = 30 Vdc, IC = 5.8 Adc Test 3 VCE = 80 Vdc, IC = 100 mAdc 2N6283 VCE = 100 Vdc, IC = 100 mAdc 2N6284 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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