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Part: 2N6351
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> NPN
Description: NPN Darlington Transistor, Package : TO-33
Company: Microsemi Corporation
Datasheet: Download 2N6351 datasheet File size : 138 kB
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Datasheet text preview:
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
Symbol
VCER VCBO VEBO IB IC
2N6350 2N6352
80 80
2N6351 2N6353
150 150
Units
Vdc Vdc Vdc Vdc Adc Adc Adc
12 6.0 0.5 5.0 10(1)
2N6350 2N6351
Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RJC
2N6352 2N6353
W W 0 C Unit
0
2N6350, 2N6351 TO-33*
1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) 2) 3) 4) Applies for tp 10 ms, Duty cycle 50% Derate linearly @ 5.72 mW/0C above TA > 250C Derate linearly @ 50 mW/0C above TC > 1000C Derate linearly @ 11.4 mW/0C above TA > 250C Derate linearly @ 250 mW/0C above TC > 1000C
2N6350 2N6351
20
2N6352 2N6353
4.0
C/W
2N6352, 2N6353 TO-24* (TO-213AA)
5)
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
*See Appendix A for package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 25 mAdc, RB1E = 2.2 k, RB2E = 100 2N6350, 2N6352 2N6351, 2N6353 V(BR)CER 80 150 Vdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) Characteristics
Emitter-Base Breakdown Voltage IEB = 12 mAdc, Base 1 Open IEB = 12 mAdc, Base 2 Open Collector-Emitter Cutoff Current VEB1 = 2.0 Vdc, RB2E = 100 , VCE = 80 Vdc VEB1 = 2.0 Vdc, RB2E = 100 , VCE = 150 Vdc Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Collector-Emitter Saturation Voltage IC = 5.0 Adc, RB2E = 100 , IB1 = 5.0 mAdc IC = 5.0 Adc, RB2E = 100 , IB1 = 10 mAdc Base-Emitter Voltage IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100
Symbol V(BR)EBO
Min. 6.0 12
Max.
Unit Vdc
2N6350, 2N6352 2N6351, 2N6353
ICEX
1.0 1.0
µAdc
ON CHARACTERISTICS (6)
2N6350, 2N6352 hFE
2,000 2,000 400 1,000 1,000 200
10,000
2N6351, 2N6353
10,000
2N6350, 2N6352 2N6351, 2N6353
VCE(sat)
1.5 2.5 2.5
Vdc
VBE1(on)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 ; f = 10 MHz Output Capacitance VCB1 = 10 Vdc, 100 kHz f 1.0 MHz, Base 2 Open hfe 5.0 Cobo 25 120 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 5.0 Adc Turn-Off Time VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352) (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352)
t
on
0.5
µs
t
off
1.2
µs
SAFE OPERATING AREA
DC Tests TC = +1000C, 1 Cycle, t 1.0 s, tr + tf = 10 µs, RB2E = 100 (See fig 6 for 2N6350, 2N6351) Test 1 VCE = 1.5Vdc, IC = 3.3 Adc 2N6350, 2N6351 Test 2 VCE = 30 Vdc, IC = 167 mAdc 2N6350, 2N6351 Test 3 VCE = 80 Vdc, IC = 35 mAdc 2N6350 Test 4 VCE = 150 Vdc, IC = 13 mAdc 2N6351 TC = +1000C, 1 Cycle, t 1.0 s, tr + tf = 10 µs, RB2E = 100 (See fig 7 for 2N6352, 2N6353) Test 1 VCE = 5.0Vdc, IC = 5.0 Adc 2N6352, 2N6353 Test 2 VCE = 10 Vdc, IC = 2.5 Adc 2N6352, 2N6353 Test 3 VCE = 80 Vdc, IC = 95 mAdc 2N6352 Test 4 VCE = 150 Vdc, IC = 35 mAdc 2N6353 (6) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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