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Part: 2N6650
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> PNP
Description: PNP Darlington Transistor, Package : TO-3
Company: Microsemi Corporation
Datasheet: Download 2N6650 datasheet File size : 94 kB
Request For quote: Find where to buy 2N6650
Datasheet text preview:
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol 2N6648 2N6649 2N6650 Unit
VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RJC
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.3 mW/0C for TA > +250C 2) Derate linearly 567 mW/0C for TC > +250C
0
TO-3* (TO-204AA)
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min.
*See Appendix A for package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc
Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100
V(BR)CER
Vdc
Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc
ICBO
mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N6648, 2N6649, 2N6650 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't)
Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc VCE = -60 Vdc VCE = -80 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc, VBE = 1.5 Vdc VCE = -60 Vdc, VBE = 1.5 Vdc VCE = -80 Vdc, VBE = 1.5 Vdc Forward-Current Transfer Ratio IC = -1.0 Adc, VCE = 3.0 Vdc IC = -5.0 Adc, VCE = 3.0 Vdc IC = -10 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC =-5 .0 Adc, IB = -10 mAdc IC = -10 Adc, IB = -0.1 Adc Base-Emitter Voltage IC = -5.0 Adc, VCE = -3.0 Vdc IC = -10 Adc, VCE = -3.0 Vdc Symbol IEBO 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 Min. Max. -10 -1.0 -1.0 -1.0 -0.3 -0.3 -0.3 Unit mAdc
ICEO
mAdc
ICEX
mAdc
ON CHARACTERISTICS (3)
hFE
300 1,000 100
20,000
VCE(sat)
-2.0 -3.0 -2.8 -4.5
Vdc
VBE(on)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC =- 1.0 Adc, VCE = -5.0 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo 50 400 300 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = -30 Vdc; IC = -5.0 Adc; IB1 =- 20 mAdc Turn-Off Time VCC = -30 Vdc; IC = -5.0 Adc; IB1 = -IB2 = 20 mAdc
t
on
2.5 10
µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = -8.5 Vdc, IC = -10 Adc Test 2 VCE = -25 Vdc, IC = -3.4 Adc Test 3 VCE = -40 Vdc, IC = -0.9 Adc 2N6648 VCE = -60 Vdc, IC = -0.3 Adc 2N6449 VCE = -80 Vdc, IC = -0.14 Adc 2N6650 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
Others parts begin by 2n
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