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Details, datasheet, quote on part number:2N708
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| Part: | 2N708 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN |
| Description: | NPN Transistor, Package : TO-18 |
| Company: | Microsemi Corporation |
| Datasheet: | Download 2N708 datasheet File size : 53 kB |
| Request For quote: | Find where to buy 2N708
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Datasheet text preview:
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/312 Devices 2N708 Qualified Level JAN, JANTX
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation
Symbol
VCEO VCBO VEBO VCER PT Top, Tstg
Value
15 40 5.0 20 0.36 1.2 -65 to +200
Units
Vdc Vdc Vdc Vdc W W 0 C
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.06 mW/0C for TA > 250C 2) Derate linearly 6.90 mW/0C for TC > 250C
TO-18 (TO-206AA)*
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CBO V(BR)EBO V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc Vdc Vdc 25 80 Adc Adc
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage IC = 1.0 µAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE 10 Collector-Base Cutoff Current VCB = 20 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc 40 5.0 15 20
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N708 JANTX SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 0.5 mAdc, VCE = 1.0 Vdc IC = 10 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc Base-Emitter Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 1.0 mAdc, IB = 0.1 mAdc
hFE VCE(sat) VBE(sat)
15 40
120 0.40 0.80 0.72 Vdc Vdc
0.72 hfe Cobo Cibo
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHZ Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 3.0 9.0 6.0 9.0 p p
SWITCHING CHARACTERISTICS
Charge Storage Time IC = IB1 = -IB21 = 10 mAdc Turn-On Time VBE -2.0 Vdc; IC 10 mAdc; IB1 3.0 mAdc Turn-Off Time IC 10 mAdc; IB1 3.0 mAdc, IB2 -1.0 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
t
s
25 40 75
s s s
t
on
t
off
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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