Details, datasheet, quote on part number: 688-10
Part688-10
CategoryDiscrete => Diodes & Rectifiers => High Voltage Rectifiers
DescriptionHigh Voltage Rectifier, Package : See_factory
CompanyMicrosemi Corporation
DatasheetDownload 688-10 datasheet
Quote
Find where to buy
 
  
Related products with the same datasheet
688-12
688-15
688-18
688-20
688-25
Some Part number from the same manufacture Microsemi Corporation
688-12 High Voltage Rectifier, Package : See_factory
688Series High Voltage Stacks, Standard And Fast Recovery
689-1 Rectifiers Assemblies
689-1D1N1P Center Tap, Package : ND
689-2 Rectifiers Assemblies
689-2D2N2P Center Tap, Package : ND
689-3 Rectifiers Assemblies
689-3D3N3P Center Tap, Package : ND
689-4 Rectifiers Assemblies
689-4D4N4P Center Tap, Package : ND
689-5 Rectifiers Assemblies
689-5D5N5P Center Tap, Package : ND
689-6 Rectifiers Assemblies
689-6D6N6P Center Tap, Package : ND
689Series Doubler And Center Tap, 15 Amp, Standard And Fast Recovery, Magnum(r)
695-1 3 Phase Bridge, Package : NC
695Series Three Phase Bridges, 15-25 Amp, Standard And Fast Recovery Magnum(r)
696-1 3 Phase Bridge, Package : NC
696Series Three Phase Bridges, 15-25 Amp, Standard And Fast Recovery Magnum(r)
697-1 Single Phase Bridge, Package : ga
697Series Single Phase Bridges, 7.5 Amp, Standard And Fast Recovery
Same catergory

KV1435 : Variable Capacitance Diode. s Suitable for World Wide Band to 108 MHz) s Excellent Linearity (CV Curve) s Large Capacitance Ratio = 3.30 minimum) with Very Low Series Resistance s Two Diodes in a Miniature Package (SOT-23-3) s Very Small Capacitance Deviation at Tape/Reel s Very High Q APPLICATIONS The a 9 volt range variable capacitance diode designed for FM tuner applications.

MMBT4401LT1 : Small Signal Switching Transistor-NPN, Package: SOT-23 (TO-236), Pins=3.

S87C752-1DB : 80c51 8-bit Microcontroller Family 2k/64 Otp/rom, 5 Channel 8 Bit A/D, I2c, Pwm, Low Pin Count.

SML901RHN : N-channel Enhancement Mode High Voltage Power MOSFETs. NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25C unless otherwise stated) Parameter Drain Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Total Power Dissipation @ Tcase = 25C Derate above 25C Operating and Storage Junction Temperature Range Lead Tempeature (0.063" from Case for 10 Sec.).

05006BR223AKZ : CAP,CERAMIC,22NF,50VDC,10% -TOL,10% +TOL,BR TC CODE,-15,15% TC,0805 CASE. s: Dielectric: Ceramic Composition.

DSMZ10K10KTCR0.2BTBB : RES NET,METAL FOIL,10K OHMS,25WV,.1% +/-TOL,-3,3PPM TC,1611 CASE. s: Category / Application: General Use.

FDP10N60ZU : 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.8000 ohms ; Package Type: TO-220, ROHS COMPLIANT, TO-220, 3 PIN ; Number of units in IC: 1.

GUS-SL0ALF-01-2200-G : RES NET,TAN/NICR,220 OHMS,100WV,2% +/-TOL,-100,100PPM TC,5030 CASE. s: Configuration: Chip Array ; Category / Application: General Use.

HVR30B8M4J : RESISTOR, METAL GLAZE/THICK FILM, 50 W, 5 %, 300 ppm, 8400000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 8.40E6 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 50 watts (0.0670.

IRFAE40PBF : 4.8 A, 800 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 800 volts ; rDS(on): 2.3 ohms ; Package Type: TO-3, HERMETIC SEALED, MODIFIED TO-3, 2 PIN ; Number of units in IC: 1.

MIC38D1E-5163W : DATACOM TRANSFORMER FOR LAN APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

SHD620010 : 20 A, SILICON CARBIDE, RECTIFIER DIODE. s: Package: HERMETIC SEALED, CERAMIC, LCC5, 3 PIN ; Number of Diodes: 1 ; IF: 20000 mA.

UT7317-S08-R : 30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0280 ohms ; PD: 2500 milliwatts ; Package Type: SOP-8 ; Number of units in IC: 2.

YC19 : RESISTOR, NETWORK, FILM, BUSSED, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 25 volts ; Operating Temperature: -55 to 70 C (-67 to 158 F).

2N4393DCSMG4 : 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; rDS(on): 100 ohms ; PD: 600 milliwatts ; Package Type: HERMETIC SEALED, CERAMIC, LCC2-6 ; Number of units in IC: 2.

 
0-C     D-L     M-R     S-Z