Details, datasheet, quote on part number: BAW56
PartBAW56
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
Description300mw 70v Dual Switching Diode
CompanyMicrosemi Corporation
DatasheetDownload BAW56 datasheet
Cross ref.Similar parts: LM317AT, LM317BT, LM337LM, LM337LZ, LM317BD2T, LM340S-5.0, LM3940IMPX-3.3, LM2574-5.0BWM, LM2574HVM-ADJ, LM2574N-5.0
Quote
Find where to buy
 
  

 

Features, Applications

Features
Low Current Leakage Low Cost Small Outline Surface Mount Package

Operating Temperature: to +150°C Storage Temperature: to +150°C Maximum Thermal Resistance; 417°C/W Junction To Ambient

Reverse Voltage Peak Forward Current Power Dissipation Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR IF PTOT IFSM 300mW 500mA

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

Figure 1 Typical Forward Characteristics 85°C 100 TA= -40°C 10 MilliAmps 10 TA=150°C Figure 2 Typical Reverse Characteristics

Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts
Volts Instantaneous Reverse Current - MicroAmperes versus Reverse Voltage - Volts
Diode Capacitance - pF versus Reverse Voltage - Volts

 

Some Part number from the same manufacture Microsemi Corporation
BC237 NPN Transistor: 45v, 0.1a
BC237A
BC237B NPN Transistor: 45v. 0.1a
BC237C NPN Transistor: 45v, 0.1a
BC337 NPN Transistor: 45v, 0.8a
BC547 NPN Transistor: 45v, 0.1a
BC547A
BC547B
BC547C
BFR90 RF NPN Transistor: 15v, 30ma
BFR91 RF NPN Transistor: 12v, 35a
BFR96 RF NPN Transistor: 15v, 100ma
BFY90 RF NPN Transistor: 15v, 50ma
BR805DL 2 Amp Single Phase Bridge Rectifier 50 to 1000v
BRF91 RF NPN Transistor: 12v, 35a
BSA40 Schottky Rectifier
BSA70
BSA70-04
BSA70-05
BSA70-06
BUZ71 N Channel MOSFET: 50v, 56a
Same catergory

2N4901 : . 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com .

2SJ248 : . Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BF470/B : Transistor Power. Product Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 APPLICATIONS Class-B video output stages in television receivers and for high-voltage IF output stages. PNP transistors TO-126; SOT32 plastic package. NPN complements: BF469 and BF471. PINNING PIN 2 3 emitter collector, connected to mounting base Fig.1 Simplified.

BFG520/XR : uWave Wideband. BFG520; BFG520/X; BFG520/XR; NPN 9 GHZ Wideband Transistor.

BU2527DF : Switching. Silicon Diffused Power Transistor. New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. improved RBSOA performance. SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage.

FS70KM-2 : N-channel Power MOSFET High-speed Switching Use: 100v, 70a. ˇ10V DRIVE ˇVDSS. 100V ˇrDS (ON) (MAX). 20m ˇID. 70A ˇIntegrated Fast Recovery Diode (TYP.). 120ns ˇViso. 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed).

LCC120 : optically isolated. Common Input Optomos Relay. 20 1-Form-C relay. It is ideal for applications focused on peak load current handling capabilities. Small 8 Pin DIP Package Low Drive Power Requirements (TTL/CMOS Compatible) No Moving Parts High Reliability Arc-Free With No Snubbing Circuits 3750VRMS Input/Output Isolation FCC Compatible VDE Compatible No EMI/RFI Generation Machine Insertable, Wave.

MRF1001A : Amplifier. RF NPN Transistor. Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) 14v, 90mA, Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage.

SBE002 : . Applications High frequency rectification (switching regulators, converters, choppers). Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting.

PMD4003K : NPN low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package..

PSMN012-60YS : N-channel LFPAK 60 V, 11.1 M? Standard Level MOSFET Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment..

045MD22AAMK1STD : CAP,AL2O3,45UF,10% -TOL,10% +TOL. application A range of aluminium electrolytic capacitors specifically designed for a.c. operation which help to start the motor by providing a leading current to the auxillary winding. The capacitor is not permanently connected to the winding of the motor and is switched off after starting, usually automatically. Intermittent AC Motor Starting 6.3 mm Double.

BAV70S-T : 0.1 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; Package: PLASTIC, SMD, SC-88, 6 PIN ; Pin Count: 6 ; Number of Diodes: 4.

KTA1666O : 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: SOT89, SOT-89, 3 PIN.

RWO-6A5105BM : UNSHIELDED, VARIABLE INDUCTOR. s: Devices in Package: 1 ; Lead Style: WIRE ; Configuration: Variable ; Application: RF Choke ; Inductance Range: 360 microH.

T98F226K063CSA : CAPACITOR, TANTALUM, SOLID, POLARIZED, 63 V, 22 uF, SURFACE MOUNT, 3025. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 22 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 63 volts ; Leakage Current: 13.9 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 3025 ; Operating.

TNR23HP220K : RESISTOR, VOLTAGE DEPENDENT, 16 V, 400 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED ; Operating DC Voltage: 16 volts ; Operating Temperature: -40 to 150 C (-40 to 302 F).

2N501339 : 500 mA, 800 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN.

 
0-C     D-L     M-R     S-Z