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Details, datasheet, quote on part number:JAN2N1893S
 
 
Part:JAN2N1893S
Category:Discrete => Transistors => Bipolar => General Purpose => NPN
Description:NPN Transistor, Package : TO-39
Company:Microsemi Corporation
Datasheet:Download JAN2N1893S datasheet   File size : 57 kB
Request For quote:  Find where to buy JAN2N1893S
 



Datasheet text preview:
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV

MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 ) Collector Current @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Total Power Dissipation

Symbol
VCEO VCBO VEBO VCER IC PT TJ, Tsrg

All Devices
80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 -65 to +200

Units
Vdc Vdc Vdc Vdc mAdc W
0

TO-18 (TO-206AA)* 2N720A

C

THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case 97 58 RJC 0 0 0 1) Derate linearly 2.86 mW/ C for 2N720A, 4.57 mW/ C for 2N1893, S TA > 25 C 2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
0

Unit C/W

TO-5* 2N1893, 2N1893S
*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO V(BR)CER ICBO Min.

Max.

Unit Vdc Vdc

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Collector-Base Cutoff Current VCB = 120 Vdc VCB = 90 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc 80 100 10 10 10 10

µAdc Adc µAdc Adc

IEBO

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 1 of 2

2N720A; 2N1893; 2N1893S JAN SERIES

ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit

Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc

hFE

20 35 40

120 5.0 1.3 Vdc Vdc

VCE(sat) VBE(sat)

DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio VCE =5.0 Vdc, IC = 1.0 mAdc VCE =10 Vdc, IC = 5.0 mAdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance VCB = 10 Vdc, IC = 5.0 mAdc Small-Signal Short-Circuit Output Admittance VCB = 10 Vdc, IC = 5.0 mAdc Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe 3.0 hfe hib hob Cobo 2 35 45 4.0 10

100 8.0 0.5 15 µ PF

SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time (See Figure 3 of MIL-PRF-19500/182) (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
t

on + off

t

30

s

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 2 of 2