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Details, datasheet, quote on part number:JAN2N3998
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Datasheet text preview:
TECHNICAL DATA
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374 Devices 2N3996 2N3997 2N3998 2N3999 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25 C @ TC = +1000C (3) Operating & Storage Junction Temperature Range
0 (2)
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RJC
Value
80 100 8.0 0.5 5.0 10(1) 2.0 30 -65 to +200 Max. 3.33
Unit
Vdc Vdc Vdc Adc Adc W
0
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) This value applies for tp 1.0 ms, duty cycle 50% 2) Derate linearly 11.4 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC > +1000C Unit 0 C/W
TO-111*
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO V(BR)CBO ICEO ICES IEBO Min. 80 100
*See appendix A for package outline
Max.
Unit Vdc Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Breakdown Voltage IC = 10 µAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 0 Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 8.0 Vdc
10 200 200 10
µAdc Adc Adc µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 2.0 Vdc IC = 1.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 50 mAdc, VCE = 2.0 Vdc IC = 1.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 5.0 Adc, IB = 0.5 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 5.0 Adc, IB = 0.5 Adc Characteristics Symbol Min. Max. Unit
2N3996, 2N3998 hFE 2N3997, 2N3999
30 40 15 60 80 20
120
240
VCE(sat)
0.25 2.0 0.6 1.2 1.6
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe 3.0 Cobo 12 150 pF
SAFE OPERATING AREA
DC Tests TC = 1000C, 1 Cycle, t = 1.0 s Test 1 VCE = 80 Vdc, IC = 0.08 Adc Test 2 VCE = 20 Vdc, IC = 1.5 Adc (4) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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