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Details, datasheet, quote on part number:JAN2N4029
 
 
Part:JAN2N4029
Category:Discrete => Transistors => Bipolar => General Purpose => PNP
Description:PNP Transistor, Package : TO-18
Company:Microsemi Corporation
Datasheet:Download JAN2N4029 datasheet   File size : 56 kB
Request For quote:  Find where to buy JAN2N4029
 



Datasheet text preview:
TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/512 Devices 2N4029 2N4033 Qualified Level JAN JANTX JANTXV

MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range

Symbol
VCEO VCBO VEBO IC PT TJ, Tstg Symbol RJC

VALUE
80 80 5.0 1.0 2N4029 2N4033 0.5 0.8 -55 to +200 Max. 25.0
1 2

Unit
Vdc Vdc Vdc Adc W C

TO-18* (TO-206AA) 2N4029

0

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 4.56 mW/0C for TA > +250C
0

Unit C/W

TO-39* (TO-205AD) 2N4033
*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.

Max.

Unit

OFF CHARACTERISTICS
Collector-Base Cutoff Current VCB = 80 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc VBE = 3.0 Vdc Collector-Emitter Cutoff Voltage VBE = 40 Vdc; VCE = 60 Vdc ICBO 10 10 25 10 25 µAdc Adc µAdc Adc Adc

IEBO ICEX

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101 Page 1 of 2

2N4029, 2N4033 JAN SERIES

ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit

Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 5.0 Vdc IC = 100 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc

hFE

50 100 70 25

300

VCE(sat)

0.15 0.50 1.0 0.9 1.2

Vdc

VBE(sat)

Vdc

DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz hfe 1.5 Cobo Cibo 6.0 20 80 pF pF

SWITCHING CHARACTERISTICS
On-Time VCC = 31.9 Vdc; IC = 500 mAdc; IB1= 50 mAdc Rise Time VCC = 31.9 Vdc; IC = 500 mAdc; IB1 = 50 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
t

d r

15 25

s s

t

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 2 of 2