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Part: JAN2N4235
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Transistor, Package : TO-39
Company: Microsemi Corporation
Datasheet: Download JAN2N4235 datasheet File size : 309 kB
Request For quote: Find where to buy JAN2N4235
Datasheet text preview:
TECHNICAL DATA
NPN POWER AMPLIFIER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/580 Devices 2N4234 2N4235 2N4236 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @TA = 250C(1) @TC = 250C(2) Operating & Storage Junction Temperature 1)
0
Symbol 2N4234 2N4235 2N4236 Units
VCEO VCBO VEBO IC IB PT 40 40 60 60 7.0 1.0 0.5 1.0 6.0 -65 to +200 80 80 Vdc Vdc Vdc Adc Adc W
0
TO-39* (TO-205AD)
2)
TJ, Tstg Derate linearly 5.7 mW/ C for TA > +25 C Derate linearly 34 mW/0C for TC > +250C
0
C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.
*See appendix A for package outline
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N4234 2N4235 2N4236 2N4234 2N4235 2N4236 2N4234 2N4235 2N4236 2N4234 2N4235 2N4236 V(BR)CEO 40 60 80 1.0 1.0 1.0 100 100 100 100 100 100 0.5 Vdc
Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 40 Vdc VCE = 60 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc, VBE = 1.5 Vdc VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc
ICEO
mAdc
ICEX
Adc
ICBO
Adc
IEBO
mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N4234, 2N4235, 2N4236 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 100 mAdc, VCE = 1.0 Vdc IC = 250 mAdc, VCE = 1.0 Vdc IC = 500 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 100 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc
hFE
40 30 20
150
VCE(sat)
0.6 0.4 1.1 1.5
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, f = 100 MHz
hfe
Cobo
3.0 pF
100
SAFE OPERATING AREA
DC Tests TC = +250C, 1 cycle, t 0.5 s Test 1 VCE = 6.0 Vdc, IC = 1.0 Adc Test 2 VCE = 12 Vdc, IC = 500 mAdc Test 3 VCE = 30 Vdc, IC = 166 mAdc 2N4234 VCE = 30 Vdc, IC = 166 mAdc 2N4235 VCE = 30 Vdc, IC = 166 mAdc 2N4236 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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