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Part: JAN2N4399
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Transistor, Package : TO-3
Company: Microsemi Corporation
Datasheet: Download JAN2N4399 datasheet File size : 309 kB
Request For quote: Find where to buy JAN2N4399
Datasheet text preview:
TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433 Devices 2N4399 2N5745 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RJC RJA
2N4399
60 60 5.0 7.5 30
2N5745
80 80
Unit
Vdc Vdc Vdc Adc Adc W W 0 C Unit
0
@ TA =+ 250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range
20 5.0 115 -55 to +200 Max.
3
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 0.875 35
TO-3* (TO-204AA)
C/W
2)
Derate linearly @ 28.57 mW/0C for TA > +250C Derate linearly @ 1.15 W/0C for TC > +1000C
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N4399 2N5745 2N4399 2N5745 2N4399 2N5745 V(BR)CEO 60 80 100 100 5.0 5.0 5.0 Vdc
ICEO
µAdc
ICEX IEBO
µAdc µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N4399, 2N5745 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.0 Vdc IC = 15 Adc, VCE = 2.0 Vdc IC = 10 Adc, VCE = 2.0 Vdc IC = 30 Adc, VCE = 5.0 Vdc IC = 20 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10 Adc, IB = 1.0 Adc Base-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc IC = 15 Adc, IB = 1.5 Adc
2N4399 2N5745 2N4399 2N5745
hFE
40 15 15 5.0 5.0
425 60 60
2N4399 2N5745
VCE(sat)
0.55 0.75 1.0 1.7 1.8 2.0
Vdc
2N4399 2N5745
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe hfe Cobo 4.0 40 40 425 1000 pF
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 6.67 Vdc, IC = 30 Adc 2N4399 VCE = 10 Vdc, IC = 20 Adc 2N5745 Test 2 VCE = 20 Vdc, IC = 10 Adc All Types Test 3 VCE = 40 Vdc, IC = 3.0 Adc All Types Test 4 VCE = 50 Vdc, IC = 600 mAdc 2N4399 VCE = 60 Vdc, IC = 600 mAdc 2N5745 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2
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