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Part: JAN2N5004
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: NPN Transistor, Package : TO-59_ISO
Company: Microsemi Corporation
Datasheet: Download JAN2N5004 datasheet File size : 309 kB
Request For quote: Find where to buy JAN2N5004
Datasheet text preview:
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RJC RJA
0
Value
80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88
Units
Vdc Vdc Vdc Adc W
0
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > 25 C 2) Derate linearly 331 mW/0C for TC > 250C 3) This value applies for PW 8.3 ms, duty cycle 1%
0
Unit 0 C/W
0
TO-59*
C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICEO ICES Min. 80
*See appendix A for package outline
Max.
Unit Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 Vdc, IC = 0 VBE = 5.5 Vdc, IC = 0
50 1.0 1.0 1.0 1.0
µAdc µAdc mAdc mAdc mAdc
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5002, 2N5004 JAN SERIES ELECTRICAL CHARACTERISTICS (Con't)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non-saturated VCE = 5.0 Adc, IC =2.5 Adc Collector-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc 2N5002 hFE 2N5004 20 30 20 50 70 40 VBE VCE(sat)
90
200
1.45 0.25 1.5 1.45 2.2
Vdc Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 5.0 Vdc, f = 10 MHz 2N5002 2N5004 Output Capacitance VCB = 10 Vdc hfe 6.0 7.0 250 pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time IC = 5 Adc; IB1= 500 mAdc Storage Time IB2= -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc Turn-Off Time RL = 6
t
on t s t f
0.5 1.4 0.5 1.5
µs µs µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C, VCE = 0, tP = 1 second 1 Cycle Test 1 VCE = 12 Vdc, IC = 5 Adc Test 2 VCE = 32 Vdc, IC = 1.7 Adc Test 3 VCE = 80 Vdc, IC = 100 mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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