Details, datasheet, quote on part number: JAN2N5115
PartJAN2N5115
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
DescriptionP Channel MOSFET, Package : TO-18
CompanyMicrosemi Corporation
DatasheetDownload JAN2N5115 datasheet
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Features, Applications
Qualified per MIL-PRF-19500/476 Devices Qualified Level 2N5115 2N5116 JAN JANTX JANTXV

ABSOLUTE MAXIMUM RATINGS (TC =+250C unless otherwise noted) Parameters / Test Conditions Symbol All Devices

Gate-Source Voltage (1) VGS 30 Vdc Drain-Source Voltage (1) VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate Current IG 50 mAdc Power Dissipation W 0 Storage Temperature Range Tstg C (1) Symmetrical geometry allows operation of those units with source/drain leads interchanged. (2) Derate linearly 3.0 mW/0C for > 250C.

ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Parameters / Test Conditions Symbol

Gate-Source Breakdown Voltage VDS = 1.0 ľAdc Drain-Source "On" State Voltage VGS = 0 Vdc, = -15 mAdc VGS = 0 Vdc, = -7.0 mAdc VGS = 0 Vdc, = -3.0 mAdc Gate Reverse Current VDS = 0, VGS = 20 Vdc Drain Current Cutoff VGS = 12 Vdc, VDS = -15 Vdc VGS = 7.0 Vdc, VDS = -15 Vdc VGS = 5.0 Vdc, VDS = -15 Vdc V(BR)GSS 2N5115 2N5116

2N5115, 2N5116 JAN SERIES ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) (con't) Parameters / Test Conditions Symbol Min.

Zero Gate Voltage Drain Current VGS = 0, VDS = -18 Vdc VGS = 0, VDS = -15 Vdc VGS = 0, VDS = -15 Vdc Small-Signal Drain - Source "On" State Resistance VGS = -1.0 mAdc 2N5115 2N5116 VGS(off) 3.0 1.0 IDSS -15 -5.0

Gate-Source Cutoff VDS = 1.0 mAdc 2N5114 VDS = 1.0 mAdc 2N5115 VDS = 1.0 mAdc 2N5116 Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance VGS = 12 Vdc, VDS 0 2N5114 VGS = 7.0 Vdc, VDS 0 2N5115 VGS = 5.0 Vdc, VDS 0 2N5116 Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = 1.0 MHz 2N5115 2N5116 Turn-On Delay Time 2N5115 2N5116 See Figure 2 Rise Time 2N5116 19500/476 Turn-Off Delay Time 2N5115 2N5116


 

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