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Part: JANKCE1N5809
Category:
Discrete
-> Diodes & Rectifiers
-> Ultra Fast Recovery Rectifiers
Description: Ultra Fast Rectifier (less Than 100ns), Package : Die
Company: Microsemi Corporation
Datasheet: Download JANKCE1N5809 datasheet File size : 84 kB
Request For quote: Find where to buy JANKCE1N5809
Datasheet text preview:
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
FEATURES:
· · · · · · · ·
JANHCE and JANKCE JANHCF and JANKCF
1N5807 1N5809 1N5811
Chip Outline Dimensions: 68 x 68 mils Chip Thickness: 8 to 12 mils Anode Metallization: Aluminum Metallization Thickness: 70,000à Nominal à Bonding Area: 42 x 42 mils Min. Back Metallization: Gold-3000à Nominal à Junction Passivated with Thermal Silicon Dioxide - Planar Design Backside Available with Solderable Ag Backside as JANHCF or JANKCF
6 AMPS FAST RECOVERY RECTIFIER CHIP
50 - 150 VOLTS
Chip Type: RA
TYPE
JANHCE1N5807 JANHCE1N5809 JANHCE1N58011 JANKCE1N5807 JANKCE1N5809 JANKCE1N58011
VR
50V 100V 150V 50V 100V 150V
VBR
60V 110V 160V 60V 110V 160V
IO Tj = 75° C °
6.0A 6.0A 6.0A 6.0A 6.0A 6.0A
A
ELECTRICAL CHARACTERISTICS:
CHARACTERISTIC
Reverse Current Rated VR, TC = 25° C ° Reverse Current Rated VR, TC = 100° C ° Forward Voltage Drop IF = 4A, TC = 25° C ° Junction Capacitance @ VR = 10V
SYMBOL
IR IR VF Cj
TYPICAL
.01 1.0 .84 45
MAX.
5 150 .875 60
UNITS
µA µA
Volts Pf
REVERSE RECOVERY CHARACTERISTICS:
CHARACTERISTIC
Reverse Recovery Time IF = 1A, IR = 1A, IRR = 0.1A Forward Recovery Voltage @ 1A Tr = 8ns Forward Recovery Time IFM = 500 mA
SYMBOL
Trr Vrr
TYPICAL
2.5 1.5
MAX.
30 2.2 15
UNITS
ns V ns
MSC1345.PDF 02-23-99
JANHCE and JANKCE JANHCF and JANKCF
1N5807 1N5809 1N5811
GROUP A ELECTRICALS
TEST # 1 2 3 4 5 6 VFM1 VFM2 IR1 V(BR)1 SYMBOL
DRAWING NUMBER: MIL-S-19500/477 NUMBER:JANHCE1N5807/5809/5811 D00G1N5807/5809/5811KC TEST CONDITIONS SUBGROUP A2 IFM = 4.0 A IFM = 6.0 A VR = 50 V (5807) VR = 100 V (5809) VR = 150 V (5811) I(BR) = 100 µ A .875 .925 5.0 1N5807 1N5809 1N5811 60 110 160 V V
µA
MINIMUM
MAXIMUM
UNIT
V V V
7 8 9 IR2 SUBGROUP A3 VR = 50 V (5807) VR = 100 V (5809) VR = 150 V (5811) IFM = 4.0 A IFM = 4.0 A I(BR) = 100 µ A
TA = + 100° C ° TA = + 100° C ° TA = - 65° C ° TA = - 65° C ° 1N5807 1N5809 1N5811 50 100 150
150 0.800 1.075
µA
10 11 12
VFM3 VFM4 V(BR)2
V V V V V
13 14 15 16 17 18 trr CJ VFRM tfr SUBGROUP 4 IF = IR = 1.0 A IRM(REC) = 0.1 A VR = 10 V, tr = 8 nS tp 20 nS f = 1 Mhz IFM = 500 mA tr 8 nS VFR = 1.1 x VF IFM = 500 mA(pk) dl/dt = 100 A\us (min) 30 60 2.2 15 nS pF V nS Vsig = 50 mV (P-P) (MAX)
MSC1345.PDF 02-23-99
JANHCE and JANKCE JANHCF and JANKCF
1N5807 1N5809 1N5811
DIE DIMENSIONS: DIMENSIONS :
MIL-PRF-19500/477C
A B
ANODE
B
A
ANODE AL THICKNESS 60,000 Å MINIMUM
C
C A T H O D E AU THICKNESS 2500, Å MINIMUM
1N5807, 1N5809, 1N5811
Dimensions Ltr A B C Notes: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. Figure 7. JANC (E-version) die dimensions. Min .066 .057 .008 Inches Max .070 .061 .012 Millimeters Min Max 1.68 1.78 1.45 1.55 0.20 0.30
MSC1345.PDF 02-23-99
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