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Details, datasheet, quote on part number:JANS2N6989
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| Part: | JANS2N6989 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Quad Transistor |
| Description: | NPN Quad Transistor, Package : 14_PIN_DIP |
| Company: | Microsemi Corporation |
| Datasheet: | Download JANS2N6989 datasheet File size : 59 kB |
| Request For quote: | Find where to buy JANS2N6989
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Datasheet text preview:
TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559 Devices 2N6989 2N6989U 2N6990 Qualified Level JAN JANTX JANTXV JANS
MAXIMUM RATINGS (1) Ratings
Collector-Emitter Voltage (3) Collector-Base Voltage (3) Emitter-Base Voltage (3) Collector Current (3) Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PD
Value
50 75 6.0 800 1.5 1.0 0.4 -65 to +200
Units
Vdc Vdc Vdc mAdc W 20 PIN LEADLESS*
0
TO- 116* 2N6989
Top, Tstg 1) Maximum voltage between transistors shall be 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA = +250C for 2N6990 Ratings apply to total package. 3) Ratings apply to each transistor in the array.
@ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2) Operating & Storage Junction Temperature Range
C
2N6989U
14 PIN FLAT PACK* 2N6990
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 50
Max.
Unit Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc; Ic= 10 ľAdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc; Ic= 10 ľAdc
10 10 10 10
Adc ľAdc Adc ľAdc
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (4)
Characteristics Symbol Min. Max. Unit
Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc
hFE
50 75 100 100 30
325 300
VCE(sat)
0.3 1.0 0.6 1.2 2.0
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IE = 0, 100 kHz f 1.0 MHz (4) Pulse Test: Pulse Width = 300ľs, Duty Cycle 2.0%.
hfe
hfe Cobo Cibo
2.5 50
8.0
8.0 25
pF pF
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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