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Details, datasheet, quote on part number:JANTX2N1890S
 
 
Part:JANTX2N1890S
Category:Discrete => Transistors => Bipolar => General Purpose => NPN
Description:NPN Transistor, Package : TO-39
Company:Microsemi Corporation
Datasheet:Download JANTX2N1890S datasheet   File size : 57 kB
Request For quote:  Find where to buy JANTX2N1890S
 



Datasheet text preview:
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX

MAXIMUM RATINGS Ratings
Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Symbol
VCBO VEBO IC PT TJ, Tstg Symbol ZJX

2N1711
75

2N1890
100

Unit
Vdc Vdc mAdc W W 0 C Unit C/W

@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range

7.0 500 0.8 3.0 -65 to +200 Max. 58

THERMAL CHARACTERISTICS
Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C
0

TO-5*
*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.

Max.

Unit

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage IC = 100 µAdc Collector-Emitter Breakdown Voltage RBE = 10 , IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711, S 2N1890, S 2N1711, S 2N1890, S 2N1711, S 2N1890, S V(BR)CBO 75 100 50 80 30 60 7.0 10 10 5.0 Vdc

V(BR)CER

Vdc

V(BR)CEO

Vdc

V(BR)EBO 2N1711 2N1890 ICBO IEBO

Vdc Adc Adc

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 1 of 2

2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 50 mAdc, IB = 5.0 mVdc

hFE 2N1711, S 2N1711, S 2N1890, S 2N1890, S VCE(sat)

20 100 50

300

1.5 5.0 1.2 1.3 0.9

Vdc

VBE(sat) 2N1890, S

Vdc

DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 5.0 mAdc, VCE = 10 Vdc Magnitude of Common Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz Small-Signal Short-Circuit Input Impedance IC = 5.0 mAdc, VCB = 10 Vdc Small-Signal Short-Circuit Output Admittance IC = 5.0 mAdc, VCB = 10 Vdc 2N1711, S 2N1890, S Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz 2N1711, S 2N1890, S hfe 80 90 200 270

hfe
3.5 hib hob 1.0 .03 Cobo 8.0 5.0 25 15 4.0 12 8.0

µ

pF

SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time (See figure 1 of MIL-PRF-19500/225) (3) Pulse Test: Pulse Width 250 to 350µs, Duty Cycle 2.0%.
t

on + off

t

30

s

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

P 120101 age 2 of 2