Details, datasheet, quote on part number: JANTX2N6353
PartJANTX2N6353
CategoryDiscrete => Transistors => Bipolar => Darlington => NPN
DescriptionNPN Darlington Transistor, Package : TO-33
CompanyMicrosemi Corporation
DatasheetDownload JANTX2N6353 datasheet
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Features, Applications
Qualified per MIL-PRF-19500/472 Devices 2N6352 2N6353 Qualified Level JAN JANTX JANTXV

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

Total Power Dissipation = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RJC

Characteristics Thermal Resistance, Junction-to-Case Applies for tp 10 ms, Duty cycle 50% Derate linearly 5.72 mW/0C above > 250C Derate linearly 50 mW/0C above > 1000C Derate linearly 11.4 mW/0C above > 250C Derate linearly 250 mW/0C above > 1000C

Emitter-Base Breakdown Voltage IEB = 12 mAdc, Base 1 Open IEB = 12 mAdc, Base 2 Open Collector-Emitter Cutoff Current = 2.0 Vdc, 100 , VCE = 80 Vdc = 2.0 Vdc, 100 , VCE = 150 Vdc

Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio = 1.0 Adc, VCE = 10 Vdc, = 10 MHz Output Capacitance = 10 Vdc, 100 kHz f 1.0 MHz, Base 2 Open hfe 5.0 Cobo 120 pF

Turn-On Time VCC = 30 Vdc; = 5.0 Adc Turn-Off Time VCC = 30 Vdc; = 5.0 Adc (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352) (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352)

DC Tests +1000C, 1 Cycle, = 10 Ás, = 100 (See fig 6 for 2N6350, 2N6351) Test 1 VCE = 3.3 Adc 2N6350, 2N6351 Test 2 VCE = 30 Vdc, = 167 mAdc 2N6350, 2N6351 Test 3 VCE = 80 Vdc, = 35 mAdc 2N6350 Test 4 VCE = 150 Vdc, = 13 mAdc +1000C, 1 Cycle, = 10 Ás, = 100 (See fig 7 for 2N6352, 2N6353) Test 1 VCE = 5.0 Adc 2N6352, 2N6353 Test 2 VCE = 10 Vdc, = 2.5 Adc 2N6352, 2N6353 Test 3 VCE = 80 Vdc, = 95 mAdc 2N6352 Test 4 VCE = 150 Vdc, = 35 mAdc 2N6353 (6) Pulse Test: Pulse Width = 300Ás, Duty Cycle 2.0%.


 

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