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Part: JANTXV2N5581
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: NPN Transistor, Package : TO-46
Company: Microsemi Corporation
Datasheet: Download JANTXV2N5581 datasheet File size : 169 kB
Request For quote: Find where to buy JANTXV2N5581
Datasheet text preview:
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
Value
50 75 6.0 800 0.5 2.0 -55 to +200
Unit
Vdc Vdc Vdc mAdc W W 0 C
@ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C
TO-46* (TO-206AB)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 Max. Unit Vdc Adc µAdc Adc µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc
IEBO
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 1 of 2
2N5581, 2N5582 JAN SERIES
ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc IC = 0.1 mAdc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Characteristics Symbol Min. Max. Unit
2N5581 hFE
30 35 40 40 20 50 75 100 100 30
120
2N5582
hFE
300
VCE(sat)
0.3 1.0 0.6 1.2 2.0
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc Forward Current Transfer Ratio IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz 2N5581 2N5582 hfe 30 50 2.5 8.0 25 pF pF
hfe
Cobo Cibo
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
t
on
35 300
s s
t
off
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
P 120101 age 2 of 2
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