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Details, datasheet, quote on part number:MSAFA1N100P3
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| Part: | MSAFA1N100P3 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Enhancement N-Channel |
| Description: | 1 Amp 1000 V N-channel Enhancement Mode High Density |
| Company: | Microsemi Corporation |
| Datasheet: | Download MSAFA1N100P3 datasheet File size : 46 kB |
| Request For quote: | Find where to buy MSAFA1N100P3
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Datasheet text preview:
Santa Ana Division
MSAFA1N100P3
MOSFET Device
Features
· · · · · · · · Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing "L" Suffix Available with "J" leads
1 Amp 1000 V N-Channel
enhancement mode high density
Applications
Implantable Cardio Defibrillator Testing and Screening (per lot) · 100% Testing at 25C, DC parameters · Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits) Maximum Ratings
S YMBOL V DS S V GS ID1 ID2 IDM1 IAR E AR E AS TJ, TSTG P ARAMETER Drain - S ourc e Volt age Gat e - Sourc e V oltage Cont inuous Drain Current @ TC = 25 Cont inuous Drain Current @ TC = 100 P uls ed Drain Current A valanc he Current Repet it ive A valanc he Energy S ingle Puls e A valanc he Energy Operat ing and S t orage: Junc t ion Temperature Range
V ALUE 1000 ±20 1 0. 8 4 1 TB D TB D -55 to 150
UNI T V olt s V olt s A mps A mps A mps A mps mJ mJ C
Static Electrical Characteristics
SYMBOL BVDS S VGS (TH)2 VGS (TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERI STIC / TEST CONDITI ONS MI N Drain - S ourc e Break down Voltage (VGS = 0V, ID = 0.25mA ) 1000 Gat e Thres hold Volt age (VGS= VDS, ID = 1 mA, TJ = 37C) Gat e Thres hold Volt age (VGS= VDS, ID = 1 mA, TJ = 25C) 2 Drain Sourc e On-S tate Res is t anc e (VGS = 10V , ID = ID1, TJ = 25C) Drain Sourc e On-S tate Res is t anc e (VGS = 7V , ID = 5...150 mA, TJ= 37C) Drain Sourc e On-S tate Res is t anc e (VGS = 7V , ID = 5...150 mA, TJ= 25C) Drain Sourc e On-S tate Res is t anc e (VGS = 7V , ID = 5...150 mA, TJ= 60C) Drain Sourc e On-S tate Res is t anc e (VGS = 7V , ID = ID1, TJ = 125C) Zero Gate Volt age Drain Current (V DS = 80%B VDSS, VGS = 0V, TJ = 25C) Zero Gate Volt age Drain Current (V DS = 80%B VDSS, VGS = 0V, TJ = 37C) Zero Gate Volt age Drain Current (V DS = 80%B VDSS, VGS = 0V, TJ = 125C) Gat e-Sourc e Leak age Current (VGS = ±20V, V CE =0V ) Gat e-Sourc e Leak age Current (VGS= ±20V V CE =0V), Tj= 37C Gat e-Sourc e Leak age Current (VGS= ±20V V CE =0V), Tj= 125C TYP 3.4 3.5 12.5 12.5 11.5 15 23.5 1 MAX UNI T Volt s Volt s 4.5 Volt s 13.5 ohm ohm 14 ohm ohm ohm 10 uA uA 100 uA ±100 nA nA 500 nA
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2 8 3 0 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989 www.MICROSEMI.com Data Sheet # MSC Updated: December 1999
Santa Ana Division
MSAFA1N100P3
Fast MOSFET for Implantable Cardio Defibrillator Applicaions
Dynamic Electrical Characteristics
SYMBOL Cis s Cos s Crs s Qg Qgs Qgd t d (on) tr t d (off) tf t d (on) tr t d (off) tf VS D t rr Qrr CHARACTERI STIC Input Capac it anc e Output Capac it anc e Revers e Trans fer Capac itanc e Tot al Gate Charge Gate-Sourc e Charge Gate-Drain (" Miller") Charge Turn-on Delay Time Ris e Time Turn-off Delay Time Fall Time Turn-On Delay Time Ris e Time Turn-off Delay Time Fall Time Diode Forward Voltage Revers e Rec overy Time Revers e Rec overy Charge TES T CONDITI ONS VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDS = 0.5B VDSS IC = 20 mA Res is t ive Swit c hing (25C) VGS = 10V, VDS = 0. 5B VDS S ID = 20 mA Rg = 1. 6 Ohms Res is t ive Swit c hing (25C) VGS = 10V, VDS = 0. 5B VDS S ID = 100 mA Rg = 1. 6 Ohms VGS =0 V, IS = 1 A IS = 1 A, d IS / dt = 100 A /us IS = 1 A, d IS / dt = 100 A /us M IN TYP 290 36 15 20 1 10 6. 3 5. 9 315 2. 6 6. 3 5. 8 76 470 MAX 350 45 25 UNIT pF pF pF nC nC nC ns ns ns us ns ns ns ns V ns uC
1 130 0. 7
2 8 3 0 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 FAX (714)557.5989 www.MICROSEMI.com Data Sheet # MSC Updated: December 1999
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