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Part: MSAFR30N20A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N Channel MOSFET, Package : CoolPack1
Company: Microsemi Corporation
Datasheet: Download MSAFR30N20A datasheet File size : 381 kB
Request For quote: Find where to buy MSAFR30N20A
Datasheet text preview:
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAER30N20A MSAFR30N20A
200 Volts 30 Amps 85 m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
· · · · ·
· ·
Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request
Maximum Ratings @ 25°C (unless otherwise specified) °
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC
MAX. 200 200 +/-20 +/-30 30 19 120 30 15 200 5.0 300 -55 to +150 -55 to +150 30 120 0.4
DRAIN
UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
100°C
Tj= 25°C Tj=
Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case
Mechanical Outline
SOURCE
GATE
Datasheet# MSC0256B
MSAER30N20A MSAFR30N20A
Electrical Parameters @ 25°C (unless otherwise specified) °
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1)
SYMBOL
BVDSS BVDSS/TJ VGS(th) IGSS IDSS RDS(on)
CONDITIONS
VGS = 0 V, I D = 250 µA
MIN
200
TYP.
0.29
MAX
UNIT
V V/°C
Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge
gfs Ci s s Co s s Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr
VDS = VGS, ID = 1 mA VGS = ± 20V DC, VDS = 0 T J = 25°C T J = 125°C VDS =0.8·BVDSS TJ = 25°C VGS = 0 V T J = 125°C VGS= 10V, I D= 20A T J = 25°C I D= 30A T J = 25°C I D= 20A T J = 125°C VDS 15 V; I D = 20 A VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 10 V, V DS = 100 V, ID = 30 A, R G = 2.35 VGS = 10 V, V DS = 100V, I D = 30A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/ µs, IF = 10 A, di/dt = 100 A/ µs, MSAE MSAF MSAE MSAF MSAE MSAF
2.0
4.0 ±100 ±200 25 250 0.085 0.090 1.5
V nA µA
9 3500 700 110 35 190 170 130 115 22 60 1.2 1.9 50 950 tbd 9
S pF
ns
55 8 30
nC
V ns µC
Notes
(1) (2) Pulse test, t 300 µ s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Others parts begin by ms
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