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Details, datasheet, quote on part number:MSAFX10N90A
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| Part: | MSAFX10N90A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N Channel MOSFET, Package : CoolPack1 |
| Company: | Microsemi Corporation |
| Datasheet: | Download MSAFX10N90A datasheet File size : 54 kB |
| Request For quote: | Find where to buy MSAFX10N90A
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Datasheet text preview:
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAFX10N90A
900 Volts 10 Amps 1.1
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
· · · · · Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance · Very low thermal resistance · Reverse polarity available upon request
Maximum Ratings @ 25° (unless otherwise specified) C
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25° C
SYMBOL BVDSS B V DGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC
DRAIN
MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25
UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/n s Watts ° C ° C Amps Amps ° /W C
Drain-to-Gate Breakdown Voltage @ TJ 25° , RGS= 1 M C Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
100° C
Tj= 25° C Tj=
Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150° C
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case
Mechanical Outline
GATE
SOURCE
Datasheet# MSC0944.PDF
MSAFX10N90A
Electrical Parameters @ 25° (unless otherwise specified) C
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1)
SYMBOL
B V DSS BVDSS/TJ VGS(th) IGSS IDSS R DS(on)
CONDITIONS
VGS = 0 V, ID = 3 mA
MIN
900
TYP.
0.6
MAX
UNIT
V V/° C
Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge
gfs Ci s s Co s s Cr s s Td(on) tr td(off) tf Qg(on) Qg s Qgd V SD trr Q rr
VDS = VGS, ID = 4 mA VGS = ± 20VDC, VDS = 0 TJ = 25° C TJ = 125° C VDS =0.8· VDSS B TJ = 25° C VGS = 0 V TJ = 125° C VGS= 10V, ID= 5 A TJ = 25° C ID= 10 A TJ = 25° C ID= 5 A TJ = 125° C VDS 10 V; ID = 5 A VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 450 V, ID = 5 A, RG = 2.00 VGS = 10 V, VDS = 450 V, ID = 5 A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/µs, IF = 10 A, di/dt = 100 A/µs, 25 C 125 C 25 C 125 C
2.0
4.5 ±100 ±200 200 1000 1.1 1.1 2 12 4200 315 90 20 15 50 20 125 30 50
V nA µA
6
S pF
50 50 100 50 155 45 80 1.5 250 400
ns
nC
V ns µC
1 2
Notes
(1) (2) Pulse test, t 300 µs, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details.
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