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Details, datasheet, quote on part number:MSAFX50N20A
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| Part: | MSAFX50N20A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N Channel MOSFET, Package : CoolPack1 |
| Company: | Microsemi Corporation |
| Datasheet: | Download MSAFX50N20A datasheet File size : 50 kB |
| Request For quote: | Find where to buy MSAFX50N20A
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Datasheet text preview:
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAFX50N20A
200 Volts 50 Amps 45 m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
· · · · ·
· ·
Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request
Maximum Ratings @ 25°C (unless otherwise specified) °
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC
MAX. 200 200 +/-20 +/-30 50 40 200 50 30 tbd 5.0 300 -55 to +150 -55 to +150 50 200 0.25
UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
100°C
Tj= 25°C Tj=
Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0258B
MSAFX50N20A
Electrical Parameters @ 25°C (unless otherwise specified) °
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1)
SYMBOL
BVDSS BVDSS/TJ VGS(th) IGSS IDSS RDS(on)
CONDITIONS
VGS = 0 V, I D = 250 µA
MIN
200
TYP.
tbd
MAX
UNIT
V V/°C
Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge
gfs Ci s s Co s s Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr
VDS = VGS, ID = 4 mA VGS = ± 20V DC, VDS = 0 T J = 25°C T J = 125°C VDS =0.8·BVDSS TJ = 25°C VGS = 0 V T J = 125°C VGS= 10V, I D= 25A T J = 25°C I D= 50A T J = 25°C I D= 25A T J = 125°C VDS 10 V; I D = 50 A VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 10 V, V DS = 100 V, ID = 25 A, R G = 2.00 VGS = 10 V, V DS = 100V, I D = 25A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/ µs, IF = 10 A, di/dt = 100 A/ µs, 25 C 125 C 25 C 125 C
2.0
4.0 ±100 ±200 200 1000 0.045 0.055 0.09 32 4400 800 285 20 15 75 20 190 35 95
V nA µA
26
S pF
25 20 90 25 220 50 110 1.5 200 300 1.5 2.6
ns
nC
V ns µC
Notes
(1) (2) Pulse test, t 300 µ s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details.
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